Title:
METHOD FOR MAKING A PLANAR CANTILEVER MEMS SWITCH
Document Type and Number:
WIPO Patent Application WO2005082774
Kind Code:
A3
Abstract:
A method for pseudo-planarization of an electromechanical device and for forming a durable metal contact on the electromechanical device and devices formed by the method are presented. The method comprises acts of depositing various layers forming a semiconductor device. Two principal aspects of the method include the formation of a planarized dielectric/conductor layer on a substrate and the formation of an electrode in an armature of a microelectromechanical switch, with the electrode formed such that it interlocks a structural layer of the armature to ensure it remains fixed to the armature over a large number of cycles. The present invention also relates to a system and method for making MEM switches having a common ground plane. One method for making MEM switches includes: patterning a common ground plane layer on a substrate; forming a dielectric layer on the common ground plane layer; depositing a DC electrode region through the dielectric layer to contact the common ground plane layer; and depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground for the regions of the conducting layer.
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Inventors:
CHOU CHIA-SHING (US)
Application Number:
PCT/US2005/005272
Publication Date:
December 22, 2005
Filing Date:
February 17, 2005
Export Citation:
Assignee:
WIRELESS MEMS INC (US)
CHOU CHIA-SHING (US)
CHOU CHIA-SHING (US)
International Classes:
B44C1/22; B81B3/00; B81C1/00; C03C15/00; C03C25/68; C23F1/00; H01H1/00; H01H51/22; H01H57/00; H01H59/00; H01L21/00; H01L31/00; H01P1/10; (IPC1-7): B81B3/00; B81C1/00; H01H1/00
Foreign References:
| US6046659A | 2000-04-04 | |||
| US6229683B1 | 2001-05-08 |
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