Title:
METHOD OF MAKING RADIATION DETECTOR
Document Type and Number:
WIPO Patent Application WO/2018/201308
Kind Code:
A1
Abstract:
Disclosed herein is a method for making a radiation detector. The method comprises forming a recess into a substrate and forming a semiconductor single crystal in the recess. The semiconductor single crystal may be a cadmium zinc telluride (CdZnTe) single crystal or a cadmium telluride (CdTe) single crystal. The method further comprises forming electrical contacts on the semi conductor single crystal and bonding the substrate to another substrate comprising an electronic system therein or thereon. The electronic system is connected to the electrical contact of the semiconductor single crystal and configured to process an electrical signal generated by the semiconductor single crystal upon absorption of radiation particles.
Inventors:
CAO PEIYAN (CN)
LIU YURUN (CN)
LIU YURUN (CN)
Application Number:
PCT/CN2017/082822
Publication Date:
November 08, 2018
Filing Date:
May 03, 2017
Export Citation:
Assignee:
SHENZHEN XPECTVISION TECH CO LTD (CN)
International Classes:
G01T3/08
Domestic Patent References:
| WO2016053413A1 | 2016-04-07 |
Foreign References:
| US20150124940A1 | 2015-05-07 | |||
| US20100246758A1 | 2010-09-30 | |||
| US9151853B2 | 2015-10-06 | |||
| US8778715B2 | 2014-07-15 |
Other References:
See also references of EP 3619555A4
Attorney, Agent or Firm:
SHENZHEN ARK INTELLECTUAL PROPERTY AGENT LLP (CN)
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