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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/065736
Kind Code:
A1
Abstract:
The present invention addresses the problem of manufacturing, more efficiently than in the past, a light-emitting device in which Si is used in a substrate. This method for manufacturing a light-emitting device includes a first process for preparing a substrate, a second process for implanting an ionized substance in the substrate, a third process for forming an electrode or the like, a fourth process for cutting from the substrate, a fifth process for modularizing the substrate, a sixth process for conducting a light-and-heat annealing treatment, and a seventh process for forming a component, the sixth process including: a preparation step in which, for each element substrate having a different resistance value, a continuity test and annealing-light alignment are conducted within a range of loads permitted by the element; an initiation step in which the operation state of each device is confirmed by irradiating each of the element substrates with the annealing light during a prescribed period, within the range of loads permitted by the element; a main step in which each of the element substrates is irradiated with the annealing light at a prescribed substrate temperature; and a post-treatment step in which EL is measured for each of the element substrates.

Inventors:
KAWAZOE TADASHI (JP)
HASHIMOTO KAZUNOBU (JP)
SUGIURA SATOSHI (JP)
Application Number:
PCT/JP2018/035508
Publication Date:
April 02, 2020
Filing Date:
September 25, 2018
Export Citation:
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Assignee:
SPECIFIED NONPROFIT CORPORATION NANOPHOTONICS ENG ORGANIZATION (JP)
International Classes:
H01L33/00
Domestic Patent References:
WO2014208186A12014-12-31
Foreign References:
JP2018006496A2018-01-11
Other References:
KIM, JUN HYOUNG ET AL.: "GaP Homo junction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing", ADVANCES IN OPTICAL TECHNOLOGIES, vol. 2015, November 2014 (2014-11-01), pages 1 - 8, XP055698575
TADASHI KAWAZOE ET AL.: "Effects of a dressed-photon- phonon annealing for SiC-LED without transparent electrodes", PROCEEDINGS OF THE 61ST JSAP SPRING MEETING, 2014, pages 03 - 188
KAWAZOE, TADASHI ET AL.: "Emission Spectral Control of a Silicon Light Emitting Diode Fabricated by Dressed-Photon-Phonon Assisted Annealing Using a Short Pulse Pair", ADVANCES IN OPTICAL TECHNOLOGIES, vol. 2014, November 2014 (2014-11-01), pages 8, XP055698579, DOI: 10.1155/2014/958327
Attorney, Agent or Firm:
IWAIKE Mitsuru et al. (JP)
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