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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING NEGATIVE DIFFERENTIAL RESISTANCE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/054728
Kind Code:
A1
Abstract:
A method for manufacturing a negative differential resistance element of a first embodiment according to the present invention comprises: a first step for forming a first semiconductor on a substrate; a second step for forming a second semiconductor so as to be in contact with an upper portion of one side of the first semiconductor; a third step for forming a third semiconductor so as to be spaced a predetermined distance from the second semiconductor and in contact with a lower portion of one side of the semiconductor; and a fourth step for forming metal electrodes on the other side of the first semiconductor and on the one side of the first semiconductor on which the second semiconductor and the third semiconductor are formed. The method has the effect in that it can be used to obtain a multi-nary logic circuit which can express three or more logic states without significantly increasing the area that the negative differential resistance element occupies in a chip.

Inventors:
PARK JIN HONG (KR)
KIM KWAN HO (KR)
CHOI JAE WOONG (KR)
LEE JU HEE (KR)
Application Number:
PCT/KR2020/012520
Publication Date:
March 25, 2021
Filing Date:
September 16, 2020
Export Citation:
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Assignee:
UNIV SUNGKYUNKWAN RES BUSINESS FOUND (KR)
International Classes:
H01L27/26; H01L47/00
Foreign References:
KR20180135341A2018-12-20
KR20180135350A2018-12-20
KR20170109457A2017-09-29
JP2001015757A2001-01-19
JP2000031506A2000-01-28
Attorney, Agent or Firm:
SHIM, Kyoung-Shik et al. (KR)
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