Title:
METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/109996
Kind Code:
A1
Abstract:
The purpose of the present invention is, in a manufacturing process of an oxide semiconductor device having an active layer of an oxide semiconductor, to simplify the process and to improve producibility. Provided is a method for manufacturing an oxide semiconductor device having an active layer which is an oxide semiconductor layer containing indium (In), gallium (Ga), and zinc (Zn), wherein laser annealing processing is performed by irradiating a formed region of an active layer 13A with a laser beam so as to impart etching resistance to the active layer 13A.
Inventors:
GOTO TETSUYA (JP)
MIZUMURA MICHINOBU (JP)
MIZUMURA MICHINOBU (JP)
Application Number:
PCT/JP2017/031820
Publication Date:
June 21, 2018
Filing Date:
September 04, 2017
Export Citation:
Assignee:
V TECH CO LTD (JP)
UNIV TOHOKU (JP)
UNIV TOHOKU (JP)
International Classes:
H01L21/336; H01L21/20; H01L21/268; H01L21/28; H01L21/324; H01L29/786
Domestic Patent References:
| WO2007063966A1 | 2007-06-07 |
Foreign References:
| JP2010050428A | 2010-03-04 | |||
| JP2012236034A | 2012-12-06 |
Attorney, Agent or Firm:
EICHI PATENT & TRADEMARK CORP. (JP)
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