Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR CRYSTAL THIN FILM, AND LASER ANNEALING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2020/179056
Kind Code:
A1
Abstract:
A method for manufacturing a semiconductor crystal thin film according to an aspect of the present disclosure involves: irradiating an amorphous semiconductor with a first pulsed laser beam having a first pulse time width to polycrystallize the amorphous semiconductor; and irradiating the polycrystallized region of the semiconductor crystal with a second pulsed laser beam having a second pulse time width that is shorter than the first pulse time width to reduce the height of ridges on the semiconductor crystal.
Inventors:
IMOKAWA KANAME (JP)
NOHDOMI RYOICHI (JP)
WAKABAYASHI OSAMU (JP)
IKENOUE HIROSHI (JP)
NOHDOMI RYOICHI (JP)
WAKABAYASHI OSAMU (JP)
IKENOUE HIROSHI (JP)
Application Number:
PCT/JP2019/009078
Publication Date:
September 10, 2020
Filing Date:
March 07, 2019
Export Citation:
Assignee:
GIGAPHOTON INC (JP)
UNIV KYUSHU NAT UNIV CORP (JP)
UNIV KYUSHU NAT UNIV CORP (JP)
International Classes:
H01L21/20; H01L21/268; H01L21/336; H01L29/786
Domestic Patent References:
| WO2016151723A1 | 2016-09-29 |
Foreign References:
| JP2009032952A | 2009-02-12 | |||
| JP2007299911A | 2007-11-15 | |||
| JP2008546188A | 2008-12-18 | |||
| JP2002329666A | 2002-11-15 | |||
| JP2006135192A | 2006-05-25 | |||
| JP2001060551A | 2001-03-06 | |||
| JP2009032942A | 2009-02-12 | |||
| JP2007221062A | 2007-08-30 |
Attorney, Agent or Firm:
MATSUURA, Kenzo (JP)
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