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Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM
Document Type and Number:
WIPO Patent Application WO/2021/049343
Kind Code:
A1
Abstract:
The present invention comprises: (a) a step for carrying a substrate, a film being formed on the surface thereof, into a processing container; (b) a step for converting a mixed gas containing a rare gas and an oxygen-containing gas into a plasma to generate a reactive species containing oxygen and a reactive species of the rare gas; and (c) a step for supplying, to the substrate, the reactive species containing oxygen and the reactive species of the rare gas together so as to oxidize the film. In step (b), the ratio of a partial pressure PN of the rare gas relative to a total pressure PT of the mixed gas in the processing container, PN/PT, is set to 0.4 or less.

Inventors:
YAMAKADO YUKI (JP)
NAKAYAMA MASANORI (JP)
FUNAKI KATSUNORI (JP)
UEDA TATSUSHI (JP)
TSUBOTA YASUTOSHI (JP)
TAKESHIMA YUICHIRO (JP)
IGAWA HIROTO (JP)
TAKAMI EIKO (JP)
ICHIMURA KEITA (JP)
Application Number:
PCT/JP2020/032831
Publication Date:
March 18, 2021
Filing Date:
August 31, 2020
Export Citation:
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Assignee:
KOKUSAI ELECTRIC CORP (JP)
International Classes:
H05H1/46; H01L21/31; H01L21/316
Domestic Patent References:
WO2007010736A12007-01-25
WO2007136049A12007-11-29
Foreign References:
JP2010232240A2010-10-14
JP2009158784A2009-07-16
JP2004228355A2004-08-12
US20190221427A12019-07-18
Attorney, Agent or Firm:
FUKUOKA Masahiro et al. (JP)
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