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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/008548
Kind Code:
A1
Abstract:
[Problem] To provide a method for manufacturing a semiconductor device, the method enabling manufacture of a nanowire transistor having nanowires arranged at a very fine width and narrow pitch. [Solution] A method for manufacturing a semiconductor device according to an embodiment is provided with: a step for forming a first mask extending in a first direction on a semiconductor layer; a step for etching the semiconductor layer using the first mask, forming a first projecting region having both side surfaces running along the first direction, and forming a second mask on both the side surfaces; a step for exposing the top surface of the first region by removing the first mask; and a step for etching the exposed top surface to form second and third regions extending from the first region and running along the first direction.

Inventors:
OTA KENSUKE (JP)
SAITOH MASUMI (JP)
SAKUMA KIWAMU (JP)
MATSUSHITA DAISUKE (JP)
Application Number:
PCT/JP2014/064597
Publication Date:
January 22, 2015
Filing Date:
June 02, 2014
Export Citation:
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Assignee:
TOSHIBA KK (JP)
International Classes:
H01L21/336; H01L21/3065; H01L21/8247; H01L27/115; H01L29/06; H01L29/78; H01L29/788; H01L29/792
Foreign References:
JPH1079504A1998-03-24
JP2000286245A2000-10-13
JP2005528810A2005-09-22
JPH0653488A1994-02-25
JPS63226930A1988-09-21
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
Katsunuma Hirohito (JP)
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