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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING SIC SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2021/060367
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing novel techniques for manufacturing a SiC substrate that enables reduced material loss when a strain layer is removed. The present invention is a method for manufacturing a SiC substrate 30 which includes a strain layer thinning step S1 for thinning a strain layer 12 of a SiC substrate body 10 by moving the strain layer 12 to a surface side. Including such a strain layer thinning step S1 in which the strain layer is moved to (concentrated toward) the surface side makes it possible to reduce material loss L when removing the strain layer 12.

Inventors:
KANEKO TADAAKI (JP)
Application Number:
PCT/JP2020/036002
Publication Date:
April 01, 2021
Filing Date:
September 24, 2020
Export Citation:
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Assignee:
KWANSEI GAKUIN EDUCATIONAL FOUND (JP)
TOYOTA TSUSHO CORP (JP)
International Classes:
C30B29/36; B24B27/06; B24B37/10; C30B33/00; C30B33/02; C30B33/10; H01L21/304; H01L21/306
Domestic Patent References:
WO2014199615A12014-12-18
WO2017188381A12017-11-02
Foreign References:
JP2011233780A2011-11-17
JP2007115875A2007-05-10
Attorney, Agent or Firm:
TSUJITA, Tomoko (JP)
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