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Patent Searching and Data


Title:
METHOD FOR MANUFACTURING THIN-FILM BULK ACOUSTIC RESONATOR
Document Type and Number:
WIPO Patent Application WO/2022/057767
Kind Code:
A1
Abstract:
Disclosed is a method for manufacturing a thin-film bulk acoustic resonator, comprising: providing a first substrate; forming a cavity on an upper surface of the first substrate; forming a sacrificial layer in the cavity; sequentially forming, on the first substrate and the sacrificial layer, a first electrode, a piezoelectric layer, and a second electrode that are stacked, at least one of the first electrode and the second electrode having an annular arch bridge, the annular arch bridge protruding away from the piezoelectric layer, and an inner surface of the annular arch bridge enclosing an annular gap; and removing the sacrificial layer. According to the present invention, an annular arch bridge structure is formed for the first electrode and/or the second electrode, the annular arch bridge encloses a closed ring, and the annular arch bridge and the surface of a plane where the piezoelectric layer is located form an annular gap, such that an end portion of the first electrode and/or the second electrode at the boundary of an effective resonance region contacts with gas in the gap, thereby achieving the effect of eliminating the boundary clutter of the electrodes in the effective resonance region to increase the Q value of the resonator.

Inventors:
HUANG HERB HE (CN)
Application Number:
PCT/CN2021/117996
Publication Date:
March 24, 2022
Filing Date:
September 13, 2021
Export Citation:
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Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H3/02; H03H9/02; H03H9/13; H03H9/17
Foreign References:
CN110868177A2020-03-06
CN110868170A2020-03-06
CN111193484A2020-05-22
CN111082776A2020-04-28
CN111262540A2020-06-09
CN111010108A2020-04-14
CN101908865A2010-12-08
Attorney, Agent or Firm:
BEIJING SICHUANG DACHENG INTELLECTUAL PROPERTY AGENCY CO., LTD. (CN)
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