Title:
METHOD OF PREPARING MRAM BOTTOM ELECTRODE
Document Type and Number:
WIPO Patent Application WO/2020/259220
Kind Code:
A1
Abstract:
A method of preparing an MRAM bottom electrode (208), comprising: (S101) providing a substrate, said substrate sequentially comprising a metal interconnect layer (201), a first barrier layer (202), and a dielectric layer (203), a bottom via being formed in the first barrier layer (202) and the dielectric layer (203), the surface of the substrate being sequentially covered by a second barrier layer (204) and a conductive metal layer (205), and the conductive metal layer (205) filling the bottom via; (S102) performing chemical-mechanical polishing on the conductive metal layer (205), so as to remove the conductive metal layer (205) present above the second barrier layer (204); (S103) first deposition of bottom electrode metal, forming a bottom electrode metal precursor layer (206); (S104) performing chemical-mechanical polishing on the bottom electrode metal precursor layer (206), so as to remove excess second barrier layer (204) and bottom electrode metal precursor layer (206) present above the dielectric layer (203) outside of the bottom via; (S105) second deposition of bottom electrode metal, forming a bottom electrode metal layer (207); and (S106) performing photolithography and etching on the bottom electrode metal layer (207). The method simplifies the process of preparing an MRAM bottom electrode (208) while increasing the degree of flatness of same.
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Inventors:
WANG LEI (CN)
CHEN GUILIN (CN)
CHEN GUILIN (CN)
Application Number:
PCT/CN2020/093755
Publication Date:
December 30, 2020
Filing Date:
June 01, 2020
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
H01L43/12
Foreign References:
CN107017338A | 2017-08-04 | |||
CN101582390A | 2009-11-18 | |||
US6403466B1 | 2002-06-11 | |||
US20050118808A1 | 2005-06-02 | |||
CN1431702A | 2003-07-23 | |||
CN107799461A | 2018-03-13 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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