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Title:
METHOD FOR PRODUCING ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/261752
Kind Code:
A1
Abstract:
One problem addressed by the present invention is to provide a method for producing an active light sensitive or radiation sensitive resin composition which is capable of forming a pattern that is suppressed in defects. Another problem addressed by the present invention is to provide: a pattern forming method which comprises the above-described method for producing an active light sensitive or radiation sensitive resin composition; and a method for producing an electronic device, said method using the above-described pattern forming method.　A method for producing an active light sensitive or radiation sensitive resin composition according to the present invention produces an active light sensitive or radiation sensitive resin composition that contains at least a resin, which is decomposed by the action of an acid and the polarity of which is consequently increased, a compound that generates an acid when irradiated with active light or radiation, and a solvent; the compound that generates an acid when irradiated with active light or radiation comprises one or more compounds selected from the group consisting of compound (I) to compound (III); and an active light sensitive or radiation sensitive resin composition is produced by mixing one or more compounds that are selected from the group consisting of compound (I) to compound (III) and a first solution that contains the above-described resin, which is decomposed by the action of an acid and the polarity of which is consequently increased, and a first solvent.

Inventors:
OU KEIYU (JP)
TANGO NAOHIRO (JP)
YAMAMOTO KEI (JP)
MARUMO KAZUHIRO (JP)
Application Number:
PCT/JP2020/018062
Publication Date:
December 30, 2020
Filing Date:
April 28, 2020
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
C07C309/17; C07C309/42; C07C311/07; C07C311/48; C07C311/51; C09K3/00; G03F7/004; G03F7/038; G03F7/039; G03F7/20; G03F7/26
Domestic Patent References:
WO2014002808A12014-01-03
Foreign References:
JP2014149409A2014-08-21
JP2015024989A2015-02-05
JP2015024989A2015-02-05
US20160070167A12016-03-10
US20150004544A12015-01-01
US20160237190A12016-08-18
JP2018155788A2018-10-04
JP2014041327A2014-03-06
US20160274458A12016-09-22
US20120135348A12012-05-31
US20150309408A12015-10-29
US20120251948A12012-10-04
JP2014010245A2014-01-20
JP2011248019A2011-12-08
JP2010175859A2010-08-12
JP2012032544A2012-02-16
US20080248425A12008-10-09
JP2002090991A2002-03-27
JP2014059543A2014-04-03
JP2013061648A2013-04-04
JP2009267112A2009-11-12
JP2004235468A2004-08-19
US20100020297A12010-01-28
JP2008083384A2008-04-10
JPH03270227A1991-12-02
JPH03270227A1991-12-02
JP2013164509A2013-08-22
Other References:
"Journal of The International Society for Optical Engineering (Proc. of SPIE", vol. 6924, 2008, pages: 692420
"Semiconductor Process Text Book", 2007, SEMI JAPAN, article "Etching"
ACS NANO, vol. 4, no. 8, pages 4815 - 4823
See also references of EP 3992179A4
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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