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Title:
METHOD FOR PRODUCING COMPOSITE MATERIAL FOR SEMICONDUCTOR TEST SOCKET HAVING EXCELLENT HEAT DISSIPATION AND DURABILITY, AND COMPOSITE MATERIAL FOR SEMICONDUCTOR TEST SOCKET PRODUCED THEREBY
Document Type and Number:
WIPO Patent Application WO/2021/210720
Kind Code:
A1
Abstract:
The present invention pertains to: a method for producing a composite material for a semiconductor test socket, the method comprising (a) a step for preparing a mixed powder including (i) a metal powder including a magnesium powder and an aluminum or aluminum alloy powder and (ii) a polymer powder, and (b) a step for preparing a composite material by performing spark plasma sintering (SPS) on the mixed powder prepared in step (a); a composite material that is for a semiconductor test socket and produced thereby; a method for manufacturing a semiconductor test socket, the method comprising a step for preparing an insulating part made of the composite material; and a semiconductor test socket manufactured thereby.

Inventors:
KWON HAN SANG (KR)
Application Number:
PCT/KR2020/006657
Publication Date:
October 21, 2021
Filing Date:
May 21, 2020
Export Citation:
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Assignee:
NAT UNIV PUKYONG IND UNIV COOP FOUND (KR)
International Classes:
B29B13/08; B29B13/02; C08K3/013; C08K3/08; C08L67/02; G01R1/04; G01R31/28; H01B3/00; H01B3/42; B29K67/00
Domestic Patent References:
WO2002082592A12002-10-17
Foreign References:
KR20100050248A2010-05-13
KR101787737B12017-10-18
US20170050159A12017-02-23
KR101748184B12017-06-19
JP2011071260A2011-04-07
Attorney, Agent or Firm:
KIM, Jung Su (KR)
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