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Patent Searching and Data


Title:
METHOD FOR PRODUCING LIGHT-EMITTING DIODE
Document Type and Number:
WIPO Patent Application WO/2018/135690
Kind Code:
A1
Abstract:
The present invention provides a method for producing a light-emitting diode. The method for producing a light-emitting diode according to an embodiment of the present invention comprises: a step of forming a mask layer, including at least one window region and at least one protruding region, on a growth substrate; a step of forming gallium nitride (GaN), comprising N-polar gallium nitride and Ga-polar gallium nitride, on the growth substrate by subjecting gallium nitride to epitaxial lateral overgrowth (ELOG); a step of selectively etching the N-polar gallium nitride; and a step of removing the mask layer, wherein the window region of the mask layer has a negative-type window pattern.

Inventors:
KIM CHIN KYO (KR)
JANG DONG SOO (KR)
JUE MI YEON (KR)
KIM HWA SEOB (KR)
KIM DONG HOI (KR)
Application Number:
PCT/KR2017/001444
Publication Date:
July 26, 2018
Filing Date:
February 10, 2017
Export Citation:
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Assignee:
UNIV INDUSTRY COOPERATION GROUP KYUNG HEE UNIV (KR)
International Classes:
H01L33/00; H01L33/02; H01L33/04; H01L33/36
Domestic Patent References:
WO2011139004A12011-11-10
Foreign References:
US20080070334A12008-03-20
KR101383161B12014-04-14
US20130309794A12013-11-21
KR101128612B12012-03-26
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
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