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Patent Searching and Data


Title:
METHOD FOR PRODUCING OTS DEVICE, AND OTS DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/084703
Kind Code:
A1
Abstract:
The present invention is a method for producing an OTS device in which a first conduction part, an OTS part that is formed of a chalcogenide, and a second conduction part are sequentially stacked on an insulating substrate. This production method comprises: a step A wherein the first conduction part is formed on the entire area of one surface of the substrate; a step B wherein the OTS part is formed on the entire area of the first conduction part; a step C wherein the second conduction part is formed on the entire area of the OTS part; a step D wherein a resist is formed so as to cover a part of the upper surface of the second conduction part; a step E wherein the region that is not covered by the resist is dry etched; and a step F wherein the resist is subjected to ashing. In the step E, all of the second conduction part, all of the OTS part and the upper part of the first conduction part are removed in the depth direction of the above-described region by a single etching.

Inventors:
AHN HYUNG-WOO (JP)
HORITA KAZUMASA (JP)
SAWADA TAKAHIKO (JP)
YAMAMOTO TADASHI (JP)
Application Number:
PCT/JP2018/039423
Publication Date:
April 30, 2020
Filing Date:
October 24, 2018
Export Citation:
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Assignee:
ULVAC INC (JP)
International Classes:
H01L21/3065; H01L21/8239; H01L27/105; H01L45/00
Foreign References:
JP2013004540A2013-01-07
JP2010062247A2010-03-18
JP2010087008A2010-04-15
JP2011066450A2011-03-31
JP2011233917A2011-11-17
US20080096344A12008-04-24
Attorney, Agent or Firm:
OIKAWA Shu et al. (JP)
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