Title:
METHOD FOR PRODUCING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2019/181443
Kind Code:
A1
Abstract:
The present invention is a method for producing a silicon wafer, which comprises a dry etching step between a rough polishing step and a final polishing step, and which is characterized in that a silicon wafer after the rough polishing step is dry etched at an etching rate of 0.3 μm/min or less in the dry etching step. Consequently, the present invention provides a method for producing a silicon wafer, which is able to improve flatness by suppressing increase of surface defects, while reducing polishing steps.
Inventors:
OSEKI MASAAKI (JP)
IGARASHI KENSAKU (JP)
ABE TATSUO (JP)
IGARASHI KENSAKU (JP)
ABE TATSUO (JP)
Application Number:
PCT/JP2019/008192
Publication Date:
September 26, 2019
Filing Date:
March 01, 2019
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/304; B24B1/00; B24B37/04; H01L21/3065
Foreign References:
| JP2004235478A | 2004-08-19 | |||
| JP2002176013A | 2002-06-21 | |||
| JP2011167819A | 2011-09-01 | |||
| JP2005123483A | 2005-05-12 | |||
| JP2001044154A | 2001-02-16 | |||
| JP2002329690A | 2002-11-15 |
Attorney, Agent or Firm:
YOSHIMIYA Mikio et al. (JP)
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