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Patent Searching and Data


Title:
METHOD OF PROGRAMMING MEMORY DEVICE AND RELATED MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/068231
Kind Code:
A1
Abstract:
When programming a memory device which includes a plurality of memory cells coupled to a plurality of word lines and a plurality of bit lines, coarse programming is perform on two adjacent first and second word lines among the plurality of word lines. Next, an unselected bit line among the plurality of bit lines is pre-charged during a first period after performing the coarse programming on the first word line and the second word line. Also, the channel between the unselected bit line and the second word line is turned on at the start of the first period and turned off prior to the end of the first period. Then, fine programming is performed on the first word line during a second period subsequent to the first period.

Inventors:
CUI YING (CN)
JIA JIANQUAN (CN)
YOU KAIKAI (CN)
Application Number:
PCT/CN2019/110767
Publication Date:
April 15, 2021
Filing Date:
October 12, 2019
Export Citation:
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Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/10; G11C16/24
Domestic Patent References:
WO2011025731A12011-03-03
Foreign References:
US20160078949A12016-03-17
US20150039809A12015-02-05
US20140269083A12014-09-18
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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