Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
METHOD AND REACTOR FOR CONTINUOUS PRODUCTION OF SEMICONDUCTOR GRADE SILICON
Document Type and Number:
WIPO Patent Application WO2006009456
Kind Code:
A3
Abstract:
This invention relates to a method and reactor for continuous production of semiconductor grade silicon by decomposition of a silicon containing gas of ultra-high purity to particulate silicon and other decomposition products in a free-space reactor and in which the gaseous stream of decomposition gas is set into a swirl motion. Optionally the method and reactor also includes means for melting the formed particulate silicon to obtain a continuous phase of elementary silicon, and then casting the liquid silicon to form solid objects of semiconductor grade silicon.

Inventors:
ERIKSEN DAG OEISTEIN (NO)
GORSET ODDVAR (NO)
Application Number:
PCT/NO2005/000249
Publication Date:
August 03, 2006
Filing Date:
July 01, 2005
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
INST ENERGITEKNIK (NO)
ERIKSEN DAG OEISTEIN (NO)
GORSET ODDVAR (NO)
International Classes:
B01J19/24; C01B33/027; B01J19/28; C01B33/029; C01B33/03
Foreign References:
US4343772A1982-08-10
US4500492A1985-02-19
US5118486A1992-06-02
US4642227A1987-02-10
Download PDF: