Title:
METHOD FOR USING MBE TO REGROW P-GAN SINGLE-GATE STRUCTURE GAN-JFET DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/077758
Kind Code:
A1
Abstract:
A method for using MBE to regrow a p-GaN single-gate structure GaN-JFET device, comprising: etching a re-doped n+GaN layer (4) on a GaN epitaxial wafer (1), only retaining n+GaN of a source drain region, then using an MBE method at the etched out n+GaN middle gate region to regrow p-GaN (5), and forming a p-n junction with an n-GaN channel layer (3) to obtain a single-side p-n junction JFET structure. By using a method for regrowing p-Gan for a second time, a GAN-based JFET that has a lateral channel and a single-gate structure is achieved. Compared to traditional ion injection methods, the described method can reduce material damage caused by ion injection to the greatest extent.
Inventors:
GUO HUI (CN)
CHEN DUNJUN (CN)
XIE ZILI (CN)
CHEN DUNJUN (CN)
XIE ZILI (CN)
Application Number:
PCT/CN2020/094561
Publication Date:
April 29, 2021
Filing Date:
June 05, 2020
Export Citation:
Assignee:
GX OPTOELECTRONIC TECH INSTITUE CO LTD (CN)
International Classes:
H01L21/337; H01L29/808
Foreign References:
| CN110634747A | 2019-12-31 | |||
| CN102027583A | 2011-04-20 | |||
| CN102379032A | 2012-03-14 | |||
| CN108242399A | 2018-07-03 | |||
| CN103858236A | 2014-06-11 | |||
| CN102881714A | 2013-01-16 | |||
| US20110186861A1 | 2011-08-04 |
Attorney, Agent or Firm:
RAYTO PARTNERS, P.C. (CN)
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