INTERIOR WINDOW WIREBONDING

TECHNICAL FIELD

Embodiments of the present description generally relate to the field of microelectronic packaging, and, more particularly, to a microelectronic packages having at least one

microelectronic device stack, wherein a first microelectronic device within the microelectronic device stack is in electronic communication with a second microelectronic device within microelectronic device stack and/or in electrical communication with a microelectronic substrate upon which the first microelectronic device is stacked with a bond wire which extends through an opening or "window" formed through the first microelectronic device.

BACKGROUND

The microelectronic industry is continually striving to produce ever faster, smaller, and thinner microelectronic packages for use in various electronic products, including, but not limited to, computer server products and portable products, such as wearable microelectronic systems, portable computers, electronic tablets, cellular phones, digital cameras, and the like.

One way to achieve these goals is by increasing integration density, such as by stacking components within the microelectronic package. One stacking method may comprise a method typically used in NAND memory die stacking, wherein a plurality of wirebond pads are formed along one edge of each of the NAND memory dice. The NAND memory dice are stacked on a microelectronic substrate in a staggered or zig-zag configuration to allow access to the wirebond pads. Bond wires are then used to form electrical connections between the wirebond pads on various NAND memory dice and/or between the NAND memory dice and the microelectronic substrate. Although this stacking method allows for flexibility and choice in wirebond pad location, the longest distance for a transmission line to a corresponding wirebond pad location within each NAND memory die may be the entire length of the NAND memory die. This may result in signal degradation due to impedance.

Another stacking method may comprise the use of through-silicon vias wherein signal lines are formed in and through the stacked NAND memory dice to form connections therebetween, as will be understood to those skilled in the art. Through-silicon vias allow for very short conductor paths between the NAND memory dice and the microelectronic substrate, and longest distance for a transmission line to a corresponding wirebond pad location within each NAND memory die may be a fraction of the length of the NAND memory die. However, the use of through-silicon vias requires an increased number of expensive wafer level processing steps, and may cause reliability issues from copper processing temperature, volume expansion during annealing, and ion migration. Further, the use of through-silicon vias does not allow for flexibility in the positioning of the through-silicon vias within the individual microelectronic dice, as the connection must be made straight down through the microelectronic die stack.

Therefore, there is a need to develop novel microelectronic die stacking configurations and designs to reduce signal transmission lengths, minimize costs, and improve reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter of the present disclosure is particularly pointed out and distinctly claimed in the concluding portion of the specification. The foregoing and other features of the present disclosure will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings. It is understood that the accompanying drawings depict only several embodiments in accordance with the present disclosure and are, therefore, not to be considered limiting of its scope. The disclosure will be described with additional specificity and detail through use of the accompanying drawings, such that the advantages of the present disclosure can be more readily ascertained, in which:

FIG. 1 illustrates a top plan view of a microelectronic die having at least one opening defined therethrough, according to an embodiment of the present description.

FIG. 2 illustrates a side cross-sectional view of a microelectronic package including the microelectronic die of FIG. 1, according to one embodiment of the present description.

FIG. 3 illustrates a side cross-sectional view of a microelectronic package including the microelectronic die of FIG. 1, according to another embodiment of the present description.

FIGs. 4 and 5 illustrate top plan views of microelectronic dice having openings defined therethrough, according to still another embodiment of the present description.

FIG. 6 illustrates a side cross-sectional view of a microelectronic package including the microelectronic dice of FIGs. 4 and 5, according to one embodiment of the present description.

FIG. 7 illustrates a top plan view of a microelectronic die having at least one opening defined therethrough, according to an embodiment of the present description.

FIG. 8 illustrates a side cross-sectional view of a microelectronic package including the microelectronic die of FIG. 7, according to one embodiment of the present description.

FIG. 9 illustrates a top plan view of a microelectronic die having at least one opening defined therethrough, according to an embodiment of the present description.

FIG. 10 illustrates a side cross-sectional view of a microelectronic package including the microelectronic die of FIG. 9, according to one embodiment of the present description. FIG. 11 illustrates a top plan view of a microelectronic die having an opening defined therethrough, according to an embodiment of the present description.

FIG. 12 illustrates a side cross-sectional view of a microelectronic package including the microelectronic die of FIG. 11, according to one embodiment of the present description.

FIG. 13 illustrates a top plan view of a microelectronic wafer having at least one microelectronic die area and at least one opening defined therethrough, according to an embodiment of the present description.

FIG. 14 illustrates an oblique view of a wafer level microelectronic package including the microelectronic wafer of FIG. 13, according to one embodiment of the present description.

FIG. 15 is a flow diagram of a process of fabricating a microelectronic package, according to an embodiment of the present description.

FIG. 16 illustrates a computing device in accordance with one implementation of the present description.

DESCRIPTION OF EMBODIMENTS

In the following detailed description, reference is made to the accompanying drawings that show, by way of illustration, specific embodiments in which the claimed subject matter may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the subject matter. It is to be understood that the various embodiments, although different, are not necessarily mutually exclusive. For example, a particular feature, structure, or characteristic described herein, in connection with one embodiment, may be implemented within other embodiments without departing from the spirit and scope of the claimed subject matter. References within this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one implementation encompassed within the present description. Therefore, the use of the phrase "one embodiment" or "in an embodiment" does not necessarily refer to the same embodiment. In addition, it is to be understood that the location or arrangement of individual elements within each disclosed embodiment may be modified without departing from the spirit and scope of the claimed subject matter. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the subject matter is defined only by the appended claims, appropriately interpreted, along with the full range of equivalents to which the appended claims are entitled. In the drawings, like numerals refer to the same or similar elements or functionality throughout the several views, and that elements depicted therein are not necessarily to scale with one another, rather individual elements may be enlarged or reduced in order to more easily comprehend the elements in the context of the present description. The terms "over", "to", "between" and "on" as used herein may refer to a relative position of one layer with respect to other layers. One layer "over" or "on" another layer or bonded "to" another layer may be directly in contact with the other layer or may have one or more

intervening layers. One layer "between" layers may be directly in contact with the layers or may have one or more intervening layers.

Embodiments of the present description may include a microelectronic package having a microelectronic die stack attached to a microelectronic substrate, wherein a first microelectronic die within the microelectronic die stack includes an opening or "window" formed therethrough. The first microelectronic die may be in electronic communication with a second microelectronic die within microelectronic die stack and/or in electrical communication with a microelectronic substrate upon which the microelectronic die stack may be attached, wherein the electronic communication may be created with a bond wire which extends through the opening or

"window" in the first microelectronic die.

For the purposes of the present invention the term "microelectronic device" may include microelectronic dice, microelectronic substrates, and microelectronic wafers, as will be discussed.

FIG. 1 illustrates a first microelectronic die 110i having a first surface 112 ₁ with at least one bond pad 122 ₁ formed in or on the first microelectronic die first surface 112 ₁ . The first microelectronic die 110i may also include at least one opening or window 124 ₁ formed through the first microelectronic die 110 ₁ . It is understood that the openings 124 ₁ do not include notches, as they are defined within the first microelectronic die 110 ₁ and do not extend from a side 116 ₁ of the first microelectronic die 110 ₁ .

FIG. 2 illustrates the first microelectronic die 110 ₁ of FIG. 1 attached to a microelectronic substrate 150 to form a microelectronic package 100. The first microelectronic die 110 ₁ may be attached to the microelectronic substrate 150 with a first die attach adhesive layer 132 ₁ disposed between a second surface 114 ₁ of the first microelectronic die 110 ₁ and a first surface 152 of the microelectronic substrate 150. The microelectronic substrate 150 may include at least one bond pad 162 formed in or one the microelectronic structure first surface 152 and at least one interconnect bond pad 164 formed in or on a second surface 154 of the microelectronic substrate 150, wherein interconnects 166, such as solder balls, may be attached to each microelectronic substrate interconnect bond pad 164.

As further illustrated in FIG. 2, the first microelectronic die openings 124 ₁ may extend through the first microelectronic die 110 ₁ from the first microelectronic die first surface 112 ₁ to the first microelectronic die second surface 114 ₁ . The first microelectronic die bond pads 122 ₁ may be electrically connected to corresponding microelectronic substrate bond pads 162 with first bond wires 142 ₁ extending through corresponding first microelectronic die openings 124 ₁ .

The microelectronic substrate 150 may comprise any appropriate dielectric material, including, but not limited to, liquid crystal polymer, epoxy resin, bismaleimide triazine resin, FR4, polyimide materials, and the like, and may include conductive routes (not shown) formed therein and/or thereon to form any desired electrical route within the microelectronic

substrate 150.

Additional microelectronic dice may be stacked on the first microelectronic die 110i to form a microelectronic package 170. As shown in FIG. 3, a second microelectronic die 110 ₂ may be attached to the first microelectronic die 110i with a second die attach adhesive layer 132 ₂ disposed between a second surface 114 ₂ of the second microelectronic die 110 ₂ and the first microelectronic die first surface 112 ₁ . The second microelectronic die 110 ₂ may have a first surface 112 ₂ with at least one bond pad 122 ₂ formed in or on the second microelectronic die first surface 112 ₂ . The second microelectronic die 110 ₂ may also include at least one opening or window 124 ₂ formed through the second microelectronic die 110 ₂ . The second microelectronic die bond pads 122 ₂ may be electrically connected to corresponding first microelectronic die bond pads 122 ₁ with second bond wires 142 ₂ extending through corresponding second microelectronic die openings 124 ₂ .

As further shown in FIG. 3, a third microelectronic die 110 ₃ may be attached to the second microelectronic die 110 ₂ with a third die attach adhesive layer 132 ₃ disposed between a second surface 114 ₃ of the third microelectronic die 110 ₃ and the second microelectronic die first surface 112 ₂ . The third microelectronic die 110 ₃ may have a first surface 112 ₃ with at least one bond pad 122 ₃ formed in or on the third microelectronic die first surface 112 ₃ . The third microelectronic die 110 ₃ may also include at least one opening or window 124 ₃ formed through the third microelectronic die 110 ₃ . The third microelectronic die bond pads 122 ₃ may be electrically connected to corresponding second microelectronic die bond pads 122 ₂ with third bond wires 142 ₃ extending through corresponding third microelectronic die openings 124 ₃ .

The first microelectronic die 110i, the second microelectronic die 110 ₂ , and/or the third microelectronic die 110 ₃ , may be any appropriate microelectronic device, including, but not limited to, microprocessors, chipsets, graphics devices, wireless devices, memory devices, application specific integrated circuit devices, and the like. In a specific embodiment, the first microelectronic die 110i, the second microelectronic die 110 ₂ , and/or the third microelectronic die 110 ₃ , may be non-volatile memory devices.

In another embodiment, as shown in FIG. 4, one microelectronic die 110a may be formed in the manner described with regard to the first microelectronic die 110 ₁ in FIG. 2. As shown in FIG. 5, another microelectronic die 110b may also be formed in the manner described with regard to first microelectronic die 110i in FIG. 2, but in a substantially mirror-image

configuration to the microelectronic die 110a. It is understood that, if the bond pads 122 ₁ and the openings 124 ₁ of FIG. 4 are appropriately positioned, the mirror-image configuration of microelectronic die 110b of FIG. 5 may be achieved by rotating the microelectronic die 110a of FIG. 4 by 180 degrees.

As shown in FIG. 6, the one microelectronic die 110a of FIG. 4 and the other

microelectronic die 110b of FIG. 5 may be stacked in an alternating fashion, wherein the first microelectronic die 110i and the third microelectronic die 110 ₃ corresponds to the one microelectronic die 110a of FIG. 4 and wherein the second microelectronic die 110 ₂ corresponds to the other microelectronic die 110b of FIG. 5 to from a microelectronic package 175. The components of the microelectronic package 175 of FIG. 6 may be assembled in the manner discussed with regard to the microelectronic package 170 of FIG. 3. As will be understood to those skilled in the art, the stacking configuration of FIG. 6 will result in a small footprint than that of FIG. 3.

In a further embodiment, as shown in FIGs. 7 and 8, the first microelectronic die 110i may be formed with a pair of bond pads 122 _la and 122^ which are positioned on opposing sides of an associated opening 124i, wherein the first bond pad 122 _la and the second bond pad 122^ of each pair of pads are shorted together with a conductive trace 128. Thus, when the first

microelectronic die 110i, the second microelectronic die 110 ₂ , the third microelectronic die 110 ₃ , and a fourth microelectronic die 110 ₄ are assembled in the manner discussed with regard to the microelectronic package 170 of FIG. 3 to form a microelectronic package 180, there is a choice of which bond pad 122 _la , 122 _lb to use to minimize the footprint of the microelectronic package 180, as will be understood to those skilled in the art.

In still a further embodiment, as shown in FIGs. 9 and 10, the first microelectronic die 110 ₁ may be formed with a pair of openings 124 _la and 124r _b which are positioned on opposing sides of an associated bond pad 122 ₁ . Thus, as shown in FIG. 10, when the first microelectronic die 110i, the second microelectronic die 110 ₂ , the third microelectronic die 110 ₃ , and the fourth microelectronic die 110 ₄ are assembled in the manner discussed with regard to the

microelectronic package 170 of FIG. 3 to form a microelectronic package 185, there is a choice of which opening 124 _la , 124r _b to use to minimize the footprint of the microelectronic

package 185.

As will understood to those skilled in the art, the embodiment of FIGs. 1-10 require that the attachment of the wire bonds (elements 142i, 142 ₂ , 142 ₃ , etc.) be completed after that attachment of each microelectronic die (elements 110i, 110 ₂ , 110 ₃ , etc.) in sequence, respectively. In an embodiment of the present description, as shown in FIGs. 11, and 12, at least one large opening 124 _L1 may be formed in the microelectronic dice, such as the first

microelectronic die 110i of FIG. 11. The microelectronic dice, such as the first microelectronic die 110i, the second microelectronic die 110 ₂ , and the third microelectronic die 110 ₃ shown in FIG. 12, may be stacked on the microelectronic substrate 150, such that the large openings, such openings 124 _L i, 124 _L2 , and 124 _L3 , respectively, allow access to all of the bond pads, such bond pads 162, 122i, 122 ₂ , and 122 ₄ , for the attachment of the wire bonds, such as bond wires 142i, 142 ₂ , and 142 ₃ , after the stacking of the microelectronic dice, to form a microelectronic package 190.

In another embodiment of the present description, the subject matter can be applied on a wafer level. As shown in FIG. 13, a plurality of microelectronic die areas 210 _la , 210i _b , 210 _lc , and 21 O _ld may be formed in a first microelectronic wafer 2051, wherein each of the

microelectronic die areas include at least one bond pad, e.g. elements 222i _a , 222i _b , 222 _ic , and 222i _d , respectively. At least one opening 224 _a , 224 _b , 224 _c , and 224 _d may be formed adjacent each of the microelectronic die areas 210 _la , 210i _b , 210 _lc , and 210i _d , respectively. As shown in FIG. 14, the first microelectronic wafer 2051 may be stacked on a second microelectronic wafer 205 ₂ in a manner previously discuss, and at least one bond wire 242 _a , 242 _b , 242 _c , and 242 _d may extend through their respective openings 224 _a , 224 _b , 224 _c , and 224 _d to connect the bond pads 222i _a , 222 i _b , 222 _ic , and 222i _d on the first microelectronic wafer 2051 to corresponding bond pads 222 _2a , 222 _¾ , 222 _2c , and 222 _2d on the second microelectronic wafer 205 ₂ to form a wafer level microelectronic package 200. As shown in FIGs. 13 and 14, the openings 224 _a , 224 _b , 224 _c , and 224 _d need not be within the microelectronic die areas 210 _la , 210i _b , 210 _lc , and 210i _d .

FIG. 15 is a flow chart of a process 300 of fabricating a microelectronic package according to an embodiment of the present description. As set forth in block 302, a microelectronic substrate having a first surface and an opposing second surface may be formed, wherein the first microelectronic device includes at least one bond pad in or on the first microelectronic device first surface. A second microelectronic device having a first surface and an opposing second surface may be formed, wherein the second microelectronic device second surface is attached to the first microelectronic device first surface, wherein the second microelectronic device includes at least one bond pad in or on the second microelectronic device first surface, and wherein at least one opening extending through the first microelectronic device from the second

microelectronic device first surface to the first microelectronic device second surface, as set forth in block 304. As set forth in block 306, at least one bond wire may be electrically attached to the at least one bond pad on the first microelectronic device and to the at least one bond pad on the second microelectronic device, wherein the bond wire extends through the at least one second microelectronic device opening.

FIG. 16 illustrates a computing device 400 in accordance with one implementation of the present description. The computing device 400 houses a board 402. The board may include a number of microelectronic components, including but not limited to a processor 404, at least one communication chip 406A, 406B, volatile memory 408, (e.g., DRAM), non-volatile memory 410 (e.g., ROM), flash memory 412, a graphics processor or CPU 414, a digital signal processor (not shown), a crypto processor (not shown), a chipset 416, an antenna, a display (touchscreen display), a touchscreen controller, a battery, an audio codec (not shown), a video codec (not shown), a power amplifier (AMP), a global positioning system (GPS) device, a compass, an accelerometer (not shown), a gyroscope (not shown), a speaker (not shown), a camera, and a mass storage device (not shown) (such as hard disk drive, compact disk (CD), digital versatile disk (DVD), and so forth). Any of the microelectronic components may be physically and electrically coupled to the board 402. In some implementations, at least one of the

microelectronic components may be a part of the processor 404.

The communication chip enables wireless communications for the transfer of data to and from the computing device. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communications channels, etc., that may communicate data through the use of modulated electromagnetic radiation through a non-solid medium. The term does not imply that the associated devices do not contain any wires, although in some embodiments they might not. The communication chip may implement any of a number of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The computing device may include a plurality of communication chips. For instance, a first communication chip may be dedicated to shorter range wireless communications such as Wi-Fi and Bluetooth and a second communication chip may be dedicated to longer range wireless communications such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, and others.

The term "processor" may refer to any device or portion of a device that processes electronic data from registers and/or memory to transform that electronic data into other electronic data that may be stored in registers and/or memory.

Any of the microelectronic components within the computing device 400 may include a microelectronic package having a microelectronic die stack attached to microelectronic substrate, wherein a first microelectronic die within the microelectronic die stack includes an opening, wherein the first microelectronic die electrically connected with a second microelectronic die within microelectronic die stack and/or with a microelectronic substrate upon which the microelectronic die stack may be attached with a bond wire extending through the opening in the first microelectronic die.

In various implementations, the computing device may be a laptop, a netbook, a notebook, an ultrabook, a smartphone, a tablet, a personal digital assistant (PDA), an ultra mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In further implementations, the computing device may be any other electronic device that processes data.

It is understood that the subject matter of the present description is not necessarily limited to specific applications illustrated in FIGs. 1-16. The subject matter may be applied to other microelectronic devices and assembly applications, as well as any appropriate electronic application, as will be understood to those skilled in the art.

The follow examples pertain to further embodiments and specifics in the examples may be used anywhere in one or more embodiments, wherein Example 1 is a microelectronic package, comprising a first microelectronic device having a first surface and an opposing second surface, wherein the first microelectronic device includes at least one bond pad in or on the first microelectronic device first surface; a second microelectronic device having a first surface and an opposing second surface, wherein the second microelectronic device second surface is attached to the first microelectronic device first surface , wherein the second microelectronic device includes at least one bond pad in or on the second microelectronic device first surface, and wherein at least one opening extends through the second microelectronic device from the second microelectronic device first surface to the second microelectronic device second surface; and at least one bond wire electrically attached to the at least one bond pad on the first microelectronic device and to the at least one bond pad on the second microelectronic device, wherein the bond wire extends through the at least one second microelectronic device opening.

In Example 2, the subject matter of Example 1 can optionally include the at least one bond pad in or on the second microelectronic device first surface comprising a pair of bond pads on opposing sides of the at least one opening, and wherein the pair of bond pads are shorted with a conductive trace extending between the pair of bond pads.

In Example 3, the subject matter of Example 1 can optionally include the at least one opening through the second microelectronic device comprises a pair of openings on opposing sides of the at least one bond pad of the second microelectronic device, and wherein the at least one bond wire extends through one opening of the pair of openings. In Example 4, the subject matter of Example 1 can optionally include the at least one bond pad in or on the first microelectronic device first surface comprising a plurality of bond pads; the at least one bond pad of the second microelectronic device comprising a plurality of bond pads and wherein the opening through the second microelectronic device comprises a single opening; and the at least one bond wire comprising a plurality of bond wires, wherein the plurality of bond wires extend through the single opening to form electrical connections between the plurality of bond pads in or on the first microelectronic device first surface and corresponding bond pads of the plurality bond pads in or on the second microelectronic device first surface.

In Example 5, the subject matter of any of Examples 1 to 4 can optionally include the first microelectronic device comprising a first microelectronic die and wherein the second

microelectronic device comprises a second microelectronic die.

In Example 6, the subject matter of any of Examples 1 to 4 can optionally include the first microelectronic device comprising a microelectronic substrate and wherein the second microelectronic device comprises a microelectronic die.

In Example 7, the subject matter of any of Examples 1 to 4 can optionally include the first microelectronic device comprising a first microelectronic wafer and wherein the second microelectronic device comprises a second microelectronic wafer.

In Example 8, the subject matter of Example 7 can optionally include the at least one opening being outside a microelectronic die area on the second microelectronic wafer.

In Example 9, a method of fabricating a microelectronic package may comprise forming a first microelectronic device having a first surface and an opposing second surface, wherein the first microelectronic device includes at least one bond pad in or on the first microelectronic device first surface; forming a second microelectronic device having a first surface and an opposing second surface, wherein the second microelectronic device second surface is attached to the first microelectronic device first surface, wherein the second microelectronic device includes at least one bond pad in or on the second microelectronic device first surface, and wherein at least one opening extending through the second microelectronic device from the second microelectronic device first surface to the second microelectronic device second surface; and electrically attaching at least one bond wire to the at least one bond pad on the first microelectronic device and to the at least one bond pad on the second microelectronic device, wherein the bond wire extends through the at least one second microelectronic device opening.

In Example 10, the subject matter of Example 9 can optionally include forming the second microelectronic device with the at least one bond pad in or on the second microelectronic device first surface comprising forming the second microelectronic device having a pair of bond pads on opposing sides of the at least one opening, and forming a short with a conductive trace extending between the pair of bond pads.

In Example 11, the subject matter of Example 9 can optionally include forming the second microelectronic device with the at least one opening through the second microelectronic device comprising forming the second microelectronic device with a pair of openings on opposing sides of the at least one bond pad of the second microelectronic device, and wherein electrically attaching the at least one bond wire comprises electrically attaching the at least one bond wire through one opening of the pair of openings.

In Example 12, the subject matter of Example 9 can optionally include forming the first microelectronic device with the at least one bond pad in or on the first microelectronic device first surface comprising forming the first microelectronic device with a plurality of bond pads in or on the first microelectronic device first surface; forming the second microelectronic device with the at least one bond pad in or on the second microelectronic device first surface comprising forming the second microelectronic device with a plurality of bond pads in or on the second microelectronic device first surface, and wherein the opening through the second microelectronic device comprises a single opening; and electrically attaching at least one bond wire to the at least one bond pad on the first microelectronic device and to the at least one bond pad on the second microelectronic device comprising electrically attaching a plurality of bond wires, wherein the plurality of bond wires extend through the single opening to form electrical connections between the plurality of bond pads in or on the first microelectronic device first surface and

corresponding bond pads of the plurality bond pads in or on the second microelectronic device first surface.

In Example 13, the subject matter of any of Examples 9 to 12 can optionally include forming the first microelectronic device comprising forming a first microelectronic die and wherein forming the second microelectronic device comprises forming a second microelectronic die.

In Example 14, the subject matter of any of Examples 9 to 12 can optionally include forming the first microelectronic device comprising forming a microelectronic substrate and wherein forming the second microelectronic device comprises forming a microelectronic die.

In Example 15, the subject matter of any of Example 9 to 12 can optionally include forming the first microelectronic device comprising forming a first microelectronic wafer, and wherein forming the second microelectronic device comprises forming a second microelectronic wafer.

In Example 16, the subject matter of Example 15 can optionally include the at least one opening being formed outside a microelectronic die area on the second microelectronic wafer. In Example 17, an electronic system may comprise a board; and a microelectronic package attached to the board, wherein the microelectronic package includes a first microelectronic device having a first surface and an opposing second surface, wherein the first microelectronic device includes at least one bond pad in or on the first microelectronic device first surface; a second microelectronic device having a first surface and an opposing second surface, wherein the second microelectronic device second surface is attached to the first microelectronic device first surface , wherein the second microelectronic device includes at least one bond pad in or on the second microelectronic device first surface, and wherein at least one opening extends through the second microelectronic device from the second microelectronic device first surface to the second microelectronic device second surface; and at least one bond wire electrically attached to the at least one bond pad on the first microelectronic device and to the at least one bond pad on the second microelectronic device, wherein the bond wire extends through the at least one second microelectronic device opening.

In Example 18, the subject matter of Example 17 can optionally include the at least one bond pad in or on the second microelectronic device first surface comprising a pair of bond pads on opposing sides of the at least one opening, and wherein the pair of bond pads are shorted with a conductive trace extending between the pair of bond pads.

In Example 19, the subject matter of Example 17 can optionally include the at least one opening through the second microelectronic device comprises a pair of openings on opposing sides of the at least one bond pad of the second microelectronic device, and wherein the at least one bond wire extends through one opening of the pair of openings.

In Example 20, the subject matter of Example 17 can optionally include the at least one bond pad in or on the first microelectronic device first surface comprising a plurality of bond pads; the at least one bond pad of the second microelectronic device comprising a plurality of bond pads and wherein the opening through the second microelectronic device comprises a single opening; and the at least one bond wire comprising a plurality of bond wires, wherein the plurality of bond wires extend through the single opening to form electrical connections between the plurality of bond pads in or on the first microelectronic device first surface and

corresponding bond pads of the plurality bond pads in or on the second microelectronic device first surface.

In Example 21, the subject matter of any of Examples 17 to 20 can optionally include the first microelectronic device comprising a first microelectronic die and wherein the second microelectronic device comprises a second microelectronic die. In Example 22, the subject matter of any of Examples 17 to 20 can optionally include the first microelectronic device comprising a microelectronic substrate and wherein the second microelectronic device comprises a microelectronic die.

In Example 23, the subject matter of any of Examples 17 to 20 can optionally include the first microelectronic device comprising a first microelectronic wafer and wherein the second microelectronic device comprises a second microelectronic wafer.

In Example 24, the subject matter of Example 23 can optionally include the at least one opening being outside a microelectronic die area on the second microelectronic wafer.

Having thus described in detail embodiments of the present description, it is understood that the present description defined by the appended claims is not to be limited by particular details set forth in the above description, as many apparent variations thereof are possible without departing from the spirit or scope thereof.