MIXER, AND SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2020/240348

A1

Provided are a mixer and a semiconductor device wherein the circuit area is smaller and deterioration of operational ability due to heat is suppressed. A mixer according to the invention comprises a differential unit, a current source, a first load, an input terminal and a first output terminal, wherein the differential unit has first and second transistors, each of which has a metal oxide in a channel-formed area thereof. Respective first terminals of the first and second transistors are electrically connected to the input terminal and to the current source, whereas a second terminal of the first transistor is electrically connected to a first terminal of the first load and to the first output terminal. The first load has a function to flow a current between the first terminal of the first load and a second terminal thereof in response to a voltage being applied to the second terminal of the first load, whereas the current source has a function to flow constant currents from the respective first terminals of the first and second transistors to the current source. The current source has a transistor that includes silicon in a channel-formed area thereof, and the differential unit is located above the current source.

OHSHIMA KAZUAKI (JP)
KUNITAKE HITOSHI (JP)
INOUE TATSUNORI (JP)

PCT/IB2020/054751

December 03, 2020

May 20, 2020

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SEMICONDUCTOR ENERGY LAB (JP)

H03D7/00; H01L21/8234; H01L27/06; H01L27/088; H01L29/786; H03D7/12; H03D7/14

JP2009182860A	2009-08-13
JP2017192124A	2017-10-19
JP2005057629A	2005-03-03

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