Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MULTI-LAYERED WIRING MANUFACTURING METHOD, MULTI-LAYERED WIRING STRUCTURE, AND MULTI-LAYERED WIRING MANUFACTURING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2007/142172
Kind Code:
A1
Abstract:
Provided is a multi-layered wiring structure, in which there are laminated at least one circuit element formed in a semiconductor substrate or a semiconductor layer, and a plurality of unit wiring structures so formed on the semiconductor substrate or the semiconductor layer as are electrically connected with the aforementioned at least one circuit element, and having a wire and a via hole plug formed by filling a wiring groove and a via hole formed in an insulating film, with a metal wire. In this multi-layered wiring structure, the carbon/silicon ratio in an inter-wiring-layer low-dielectric-constant film is higher than the carbon/siliconratio in an inter-via-layer low-dielectric-constant film. In order to manufacture the multi-layered wiring structure, an overlying second SiOCH low-dielectric-constant film is worked, when it is grooved and stopped on an underlying first SiOCH low-dielectric-constant film, by using an end point detection according to an emission spectroscopy of a mixed gas plasma containing at least N2 and CHxFy.

Inventors:
OHTAKE HIROTO (JP)
TADA MUNEHIRO (JP)
TAGAMI MASAYOSHI (JP)
HAYASHI YOSHIHIRO (JP)
Application Number:
PCT/JP2007/061253
Publication Date:
December 13, 2007
Filing Date:
May 29, 2007
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NEC CORP (JP)
OHTAKE HIROTO (JP)
TADA MUNEHIRO (JP)
TAGAMI MASAYOSHI (JP)
HAYASHI YOSHIHIRO (JP)
International Classes:
H01L21/768; H01L21/3065; H01L21/316; H01L23/522
Domestic Patent References:
WO2005053009A12005-06-09
Foreign References:
JP2003012776A2003-01-15
JP2003133411A2003-05-09
JPH07240405A1995-09-12
JP2005191254A2005-07-14
JPH10261624A1998-09-29
JP2001093975A2001-04-06
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (4-10 Nishishinbashi 1-chome, Minato-k, Tokyo 03, JP)
Download PDF: