received by the International Bureau on 19 June 2020 (19.06.2020)

1. A multilayer filter comprising:

a plurality of dielectric layers stacked in a Z-direction that is perpendicular to each of a first direction and a second direction, the first direction perpendicular to the second direction;

a first conductive layer overlying one of the plurality of dielectric layers; a second conductive layer overlying another of the plurality of dielectric layers and spaced apart from the first conductive layer in the Z-direction;

a first via connected with the second conductive layer at a first location; and a second via connected with the second conductive layer at a second location that is spaced apart in the first direction from the first location;

wherein the first conductive layer overlaps the second conductive layer in each of the first direction and the second direction at an overlapping area to form a capacitor, and wherein the second conductive layer is free of via connections that intersect the overlapping area in each of the first direction and second direction.

2. The multilayer filter of claim 1 , wherein the first conductive layer is free of via connections that intersect the overlapping area in each of the first direction and second direction.

3. The multilayer filter of claim 1 , wherein the overlapping area is located entirely between the first location and the second location in the first direction.

4. The multilayer filter of claim 1 , wherein the overlapping area is spaced apart from each of the first location and second location in the first direction by at least about 10 microns.

5. The multilayer filter of claim 4, wherein the first location and second location are spaced apart by a spacing distance in the first direction, and the first conductive layer has a width in the first direction at the overlapping area that is less than or equal to the spacing distance.

6. The multilayer filter of claim 1 , wherein the second conductive layer is elongated in the first direction between a first end portion and a second end portion, the first location located within the first end portion, and the second location located within the second end portion.

7. The multilayer filter of claim 6, wherein the second conductive layer has a middle portion connected between the first end portion and the second end portion, at least a portion of the middle portion is located within the overlapping area.

8. The multilayer filter of claim 7, wherein at least one of the first end portion or the second end portion has a width in the second direction that is greater than a width of the middle portion in the second direction at the overlapping area.

9. The multilayer filter of claim 1 , wherein the first via and second via have respective widths in the second direction, and wherein the second conductive layer has a width in the second direction at an edge of the overlapping area that is less than the width of at least one of the first or second vias.

10. The multilayer filter of claim 1 , wherein the first location is

approximately aligned with the second location in the second direction.

11. The multilayer filter of claim 1 , wherein overlapping area is less than about 0.5 mm².

12. The multilayer filter of claim 1 , wherein the capacitor is self-aligning.

13. The multilayer filter of claim 1 , wherein a size of the overlapping area is insensitive to a relative misalignment between the first conductive layer and the second conductive layer.

14. The multilayer filter of claim 1 , wherein the multilayer filter has a characteristic frequency that is greater than about 6 GHz.

15. The multilayer filter of claim 1 , wherein the characteristic frequency comprises at least one of a low pass frequency, a high pass frequency, or an upper bound of a bandpass frequency.

16. The multilayer filter of claim 1 , wherein the second conductive layer and the first conductive layer are spaced apart in the Z-direction by less than about 500 microns.

17. The multilayer filter of claim 1 , further comprising a ground plane and a via electrically connecting at least one of the first conductive layer or the second conductive layer to the ground plane.

18. The multilayer filter of claim 1 , comprising a dielectric material disposed between the first conductive layer and the second conductive layer, the dielectric material having a dielectric constant that ranges from about 5 to about 8 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25°C and frequency of 1 MHz.

19. The multilayer filter as in claim 18, further comprising an additional dielectric material having a dielectric constant that ranges from about 1 to about 4 in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25°C and frequency of 1 MHz.

20. The multilayer filter of claim 1 , further comprising a dielectric material having a dielectric constant that is less than about 100 as determined in

accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25°C and frequency of 1 MHz.

21. The multilayer filter of claim 1 , further comprising a dielectric material having a dielectric constant that is greater than about 100 as determined in accordance with IPC TM-650 2.5.5.3 at an operating temperature of 25°C and frequency of 1 MHz.

22. The multilayer filter of claim 1 , further comprising a dielectric material that comprises an epoxy.

23. The multilayer filter of claim 1 , further comprising an organic dielectric material.

24. The multilayer filter of claim 1 , wherein the organic dielectric material comprises at least one of liquid crystalline polymer or polyphenyl ether.

25. A method of forming a frequency multilayer filter, the method comprising:

providing a plurality of dielectric layers;

forming a first conductive layer overlying one of the plurality of dielectric layers;

forming a second conductive layer overlying another of the plurality of dielectric layers and spaced apart from the first conductive layer in the Z-direction;

39 forming a first via connected with the second conductive layer at a first location and a second via connected with the second conductive layer at a second location that is spaced apart in the first direction from the first location; and

stacking the plurality of dielectric layers such that the first conductive layer overlaps the second conductive layer in each of the first direction and second direction at an overlapping area to form a capacitor, and wherein at least a portion of the overlapping area is located between the first location and the second location in the first direction, and wherein the second conductive layer is free of via connections that intersect the overlapping area in each of the first direction and second direction.

40