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Title:
NANOWIRE ION-GATED SYNAPTIC TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/232656
Kind Code:
A1
Abstract:
The present invention relates to the field of synaptic components oriented to hardware applications of neural networks. Disclosed are a nanowire ion-gated synaptic transistor and a manufacturing method therefor. The present invention combines the excellent one-dimensional transport characteristics of a fence nanowire and the advantage of a low operating voltage in an ion-gated electrical double layer system, and, compared with an existing planar large-sized synaptic transistor based on a two-dimensional material or an organic material, implements a lower power consumption and a smaller area overhead. In addition, with excellent component consistency and CMOS back-end integration features, the invention is potentially applicable in future large-scale neuromorphic computing circuits.

Inventors:
LI, Ming (Peking UniversityNo. 5 Yiheyuan Road, Haidian District, Beijing 1, CN)
LI, Xiaokang (Peking UniversityNo. 5 Yiheyuan Road, Haidian District, Beijing 1, CN)
YU, Bocheng (Peking UniversityNo. 5 Yiheyuan Road, Haidian District, Beijing 1, CN)
YANG, Yuancheng (Peking UniversityNo. 5 Yiheyuan Road, Haidian District, Beijing 1, CN)
HUANG, Ru (Peking UniversityNo. 5 Yiheyuan Road, Haidian District, Beijing 1, CN)
Application Number:
PCT/CN2020/118618
Publication Date:
November 25, 2021
Filing Date:
September 29, 2020
Export Citation:
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Assignee:
PEKING UNIVERSITY (Haidian District, Beijing 1, CN)
International Classes:
H01L29/772; H01L29/10; H01L29/423; H01L29/06
Attorney, Agent or Firm:
BEIJING WANXIANGXINYUE INTELLECTUAL PROPERTY OFFICE (5th FloorNo. 123 Zhongguancun North Street, Haidian District, Beijing 0, CN)
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