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Title:
NEUROMORPHIC DEVICE BASED ON MEMRISTOR DEVICE, AND NEUROMORPHIC SYSTEM USING SAME
Document Type and Number:
WIPO Patent Application WO/2023/027492
Kind Code:
A1
Abstract:
The present invention relates to a neuromorphic device using a memristor device and a neuromorphic system using same, and more specifically to technology providing a neuromorphic device in which both biological synapse characteristics and biological neuron characteristics responsible for memory and information transmission in the human brain are reproduced using a memristor device, and a neuromorphic system using the neuromorphic device. According to an embodiment of the present invention, the neuromorphic device comprises: a first electrode; a second electrode facing the first electrode; a switching layer formed of an amorphous material between the first electrode and the second electrode; and a source layer formed of an alloy material between the switching layer and the first electrode so as to control either the drift or the diffusion of metal ions in the switching layer, wherein one of the integral characteristics of artificial neurons due to volatility or artificial synapse characteristics due to non-volatility can be reproduced according to the size of the max current density based on the voltage applied through the first electrode.

Inventors:
PARK JEA GUN (KR)
JIN SOO MIN (KR)
WOO DAE SEONG (KR)
Application Number:
PCT/KR2022/012617
Publication Date:
March 02, 2023
Filing Date:
August 24, 2022
Export Citation:
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Assignee:
UNIV HANYANG IND UNIV COOP FOUND (KR)
International Classes:
G06N3/063
Foreign References:
KR20180057384A2018-05-30
KR102249655B12021-05-10
KR20180108025A2018-10-04
KR20190044441A2019-04-30
KR101521383B12015-05-19
Attorney, Agent or Firm:
KIM, Youn Gwon (KR)
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