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Title:
NITRIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2005/106977
Kind Code:
A1
Abstract:
A process for producing a nitride semiconductor, comprising the steps of (A) providing n-GaN substrate (101); (B) forming multiple stripe-shaped ridges having an upper surface parallel to a major surface of the substrate (101) on the substrate (101); (C) growing AlxGayInzN crystals (0≤x,y,z≤1, x+y+z=1) (104) which at a first concentration, contain n-type impurities selectively on the upper surfaces of multiple stripe-shaped ridges; and (D) growing Alx’Gay’Inz’N crystal (0≤x’,y’,z’≤1, x’+y’+z’=1) (106) which at a second concentration lower than the first concentration, contains n-type impurities on the AlxGayInzN crystals (104) so that any adjacent two AlxGayInzN crystals (104) are combined with each other by means of the Alx’Gay’Inz’N crystal (106) into one nitride semiconductor layer (120).

Inventors:
ISHIBASHI AKIHIKO
YOKOGAWA TOSHIYA
SHIMAMOTO TOSHITAKA
HASEGAWA YOSHIAKI
KAWAGUCHI YASUTOSHI
KIDOGUCHI ISAO
Application Number:
PCT/JP2005/007525
Publication Date:
November 10, 2005
Filing Date:
April 20, 2005
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
ISHIBASHI AKIHIKO
YOKOGAWA TOSHIYA
SHIMAMOTO TOSHITAKA
HASEGAWA YOSHIAKI
KAWAGUCHI YASUTOSHI
KIDOGUCHI ISAO
International Classes:
C23C16/34; H01L21/20; H01L21/205; H01S5/323; H01S5/343; H01L33/00; H01S5/22; H01S5/30; H01S5/32; (IPC1-7): H01L33/00; C23C16/34; H01L21/205; H01S5/323
Foreign References:
JP2002100579A2002-04-05
JP2002009004A2002-01-11
JP2002246694A2002-08-30
JP2002231997A2002-08-16
JP2002289539A2002-10-04
Other References:
HAFFOUZ S, BEAUMONT B. AND GIBART P. ET AL.: "Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy.", NITRIDE SEMICONDUCTOR RESEARCH, 1998, XP001203902
Attorney, Agent or Firm:
Okuda, Seiji (Osaka Securities Exchange Bldg. 8-16, Kitahama 1-chome,, Chuo-ku, Osaka-sh, Osaka, JP)
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