Title:
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/163176
Kind Code:
A1
Abstract:
The present invention reduces the generation of heat in a nitride semiconductor light-emitting element and improves slope efficiency. A nitride semiconductor light-emitting element according to one aspect is provided with: a first conductive-type nitride semiconductor layer; an active layer located on the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer located on the active layer; a current blocking layer located on a portion of the second conductive-type nitride semiconductor layer; and a transparent conductive layer located on the second conductive-type nitride semiconductor layer and transparent to light generated in the active layer.
Inventors:
FUKAMACHI TOSHIHIKO (JP)
Application Number:
PCT/JP2021/045852
Publication Date:
August 04, 2022
Filing Date:
December 13, 2021
Export Citation:
Assignee:
USHIO ELECTRIC INC (JP)
International Classes:
H01S5/20
Domestic Patent References:
| WO2012127778A1 | 2012-09-27 |
Foreign References:
| JP2011159805A | 2011-08-18 | |||
| JP2000236134A | 2000-08-29 | |||
| JP2007250637A | 2007-09-27 | |||
| JP2002094190A | 2002-03-29 | |||
| JP2010186835A | 2010-08-26 | |||
| JP2011055009A | 2011-03-17 | |||
| JP2006080469A | 2006-03-23 | |||
| JP2010212499A | 2010-09-24 | |||
| JP2005311309A | 2005-11-04 |
Attorney, Agent or Firm:
KIMURA Masayoshi (JP)
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