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Title:
NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/070910
Kind Code:
A1
Abstract:
The present invention achieves a configuration comprising a single crystal Group II-IV nitride semiconductor part on a single crystal Group III nitride semiconductor part. A nitride semiconductor structure (1) comprises a Group III nitride semiconductor part (3) and a Group II-IV nitride semiconductor part (4). The Group III nitride semiconductor part (3) is a single crystal. The Group III nitride semiconductor part (3) has a predetermined crystal plane. The Group II-IV nitride semiconductor part (4) is provided on the predetermined crystal plane of the Group III nitride semiconductor part (3). The Group II-IV nitride semiconductor part (4) is a single crystal. The Group II-IV nitride semiconductor part (4) includes a Group II element and a Group IV element. The Group II-IV nitride semiconductor part (4) forms a heterojunction with the Group III nitride semiconductor part (3). The predetermined crystal plane is a crystal plane other than the (0001) plane.

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Inventors:
TAKIZAWA TOSHIYUKI
Application Number:
PCT/JP2020/038155
Publication Date:
April 15, 2021
Filing Date:
October 08, 2020
Export Citation:
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L21/205; H01L21/365; H01S5/30
Foreign References:
JP2008507853A2008-03-13
JP2008513327A2008-05-01
JP2009518874A2009-05-07
US20130240026A12013-09-19
Other References:
MISAKI, TAKAO ET AL.: "Epitaxial growth and characterization of ZnGeN2 by metalorganic vapor phase epitaxy", JOURNAL OF CRYSTAL GROWTH, vol. 260, no. 1-2, 2 January 2004 (2004-01-02), pages 125 - 129, XP004473813
LE, DUE DUY ET AL.: "Growth of single crystal non- polar (11-20) ZnSnN2 films on sapphire substrate", APPLIED SURFACE SCIENCE, vol. 481, 19 March 2019 (2019-03-19), pages 819 - 824, XP085717351, DOI: 10.1016/j.apsusc.2019.03.195
Attorney, Agent or Firm:
HOKUTO PATENT ATTORNEYS OFFICE (JP)
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