NITRIDE SEMICONDUCTOR SUBSTRATE, MULTILAYER STRUCTURE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

Title:

NITRIDE SEMICONDUCTOR SUBSTRATE, MULTILAYER STRUCTURE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

Document Type and Number:

WIPO Patent Application WO/2021/075369

Kind Code:

A1

Abstract:

This nitride semiconductor substrate has a diameter of 2 inches or more and has a principal plane in which a crystal plane having the nearest low index is a (0001) plane, wherein the ratio of FWHM2{10-12} to FWHM1{10-12} is 80% or more.

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Inventors:

YOSHIDA TAKEHIRO (JP)

Application Number:

PCT/JP2020/038269

Publication Date:

April 22, 2021

Filing Date:

October 09, 2020

Export Citation:

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Assignee:

SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)

International Classes:

C30B29/38; C30B25/18; H01L21/205

Domestic Patent References:

WO2020158571A1

2020-08-06

Foreign References:

JP2019112266A	2019-07-11
JP2001168045A	2001-06-22
JP6595731B1	2019-10-23