NON-VOLATILE MEMORY, AND WRITING METHOD AND READING METHOD THEREFOR

Title:

NON-VOLATILE MEMORY, AND WRITING METHOD AND READING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2023/029539

Kind Code:

A1

Abstract:

Disclosed in the present invention are a non-volatile memory, and a writing method and reading method therefor. The non-volatile memory comprises a first memory unit, a second memory unit and a reference unit. The first memory unit and the second memory unit share the reference unit. The reference unit is used to provide a reference signal to determine a storage state of the first memory unit and the second memory unit. According to the non-volatile memory of the embodiments of the present disclosure, the first memory unit and the second memory unit share the same reference unit, and do not need an external reference source, thereby simplifying the structure of the non-volatile memory, increasing the memory density and storage capacity of the memory, and improving the integration level of the non-volatile memory.

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Inventors:

WANG XIAOGUANG (CN)
ZENG DINGGUI (CN)
CHANG WEI (CN)
CAO KANYU (CN)

Application Number:

PCT/CN2022/090355

Publication Date:

March 09, 2023

Filing Date:

April 29, 2022

Export Citation:

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Assignee:

CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)

International Classes:

G11C13/00; G11C11/16

Foreign References:

CN103035290A	2013-04-10
JP2008152866A	2008-07-03
CN103903650A	2014-07-02
US20140281279A1	2014-09-18

Attorney, Agent or Firm:

SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)

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