Title:
NON-VOLATILE MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/074967
Kind Code:
A1
Abstract:
A non-volatile memory equipped with a memory cell which has a first transistor and a second transistor, a drive circuit for suppling a lead voltage to each gate of the first transistor and the second transistor, and a signal output circuit for outputting a signal associated with a first value or a signal associated with a second value on the basis of each drain current of the first and second transistors during a lead operation in which the lead voltage is supplied. The second transistor is configured from a parallel circuit of a plurality of unit transistors, and the gate width of each unit transistor is greater than the gate width of the first transistor.
Inventors:
TAKENAKA SEIJI (JP)
Application Number:
PCT/JP2021/032221
Publication Date:
April 14, 2022
Filing Date:
September 02, 2021
Export Citation:
Assignee:
ROHM CO LTD (JP)
International Classes:
G11C16/04; G11C16/26; H01L27/10
Foreign References:
| JP2011103158A | 2011-05-26 |
Attorney, Agent or Firm:
SANO PATENT OFFICE (JP)
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