Title:
NOVEL ARRAY AND CONTACT ARCHITECTURE FOR 4 STACK 3D CROSSPOINT MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/032512
Kind Code:
A1
Abstract:
A three-dimensional memory including a top cell array of memory cells, an an upper-middle cell array of memory cells, a lower-middle cell array of memory cells, and a bottom cell array of memory cells. The memory has a multiple of top cell bit lines coupled to the top array and a multiple of bottom cell bit lines coupled to the bottom array. The top cell bit lines include a multiple of top cell bit line contacts, a pitch of the top cell bit line contacts is the same as a pitch of the bottom cell bit lines, and the top cell bit lines are respectively coupled to the bottom cell bit lines by the top cell bit line contacts.
Inventors:
LIU JUN (CN)
Application Number:
PCT/CN2020/108615
Publication Date:
February 17, 2022
Filing Date:
August 12, 2020
Export Citation:
Assignee:
YANGTZE ADVANCED MEMORY IND INNOVATION CENTER CO LTD (CN)
International Classes:
G11C7/18; G11C7/14
Foreign References:
| US20200202931A1 | 2020-06-25 | |||
| US20190172502A1 | 2019-06-06 | |||
| CN110914907A | 2020-03-24 | |||
| US20140056055A1 | 2014-02-27 | |||
| CN109768158A | 2019-05-17 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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