Title:
NOVEL COMPOUND SEMICONDUCTOR AND USE THEREOF
Document Type and Number:
WIPO Patent Application WO/2015/046810
Kind Code:
A1
Abstract:
Disclosed is a novel compound semiconductor which can be utilized in thermoelectric materials and the like, and the use thereof. The compound semiconductor, according to the present invention, can be represented by following chemical formula 1.
Bi2TexSea-xInyMz
In chemical formula 1, M is at least one selected from the group consisting of Cu, Fe, Co, Ag and Ni, and 2.5
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Inventors:
CHOI HYUN-WOO (KR)
LIM BYUNG-KYU (KR)
KIM TAE-HOON (KR)
PARK CHEOL-HEE (KR)
YOU EUN-AH (KR)
KWON O-JONG (KR)
LIM BYUNG-KYU (KR)
KIM TAE-HOON (KR)
PARK CHEOL-HEE (KR)
YOU EUN-AH (KR)
KWON O-JONG (KR)
Application Number:
PCT/KR2014/008705
Publication Date:
April 02, 2015
Filing Date:
September 18, 2014
Export Citation:
Assignee:
LG CHEMICAL LTD (KR)
International Classes:
H01L35/14
Foreign References:
KR20120031593A | 2012-04-04 | |||
KR20130071531A | 2013-07-01 | |||
KR20130045683A | 2013-05-06 | |||
US20100258154A1 | 2010-10-14 |
Other References:
QIAN ZHANG ET AL.: "High thermoelectric performance by resonant dopant indium in nanostructured SnTe", PNAS, vol. 110, no. 33, 13 August 2013 (2013-08-13), pages 13261 - 13266, XP055251969
See also references of EP 2899763A4
See also references of EP 2899763A4
Attorney, Agent or Firm:
PHIL & ONZI INT'L PATENT & LAW FIRM (KR)
특허법인 필앤온지 (KR)
특허법인 필앤온지 (KR)
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