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Patent Searching and Data


Title:
OPTICAL MODULATION ELEMENT AND ELECTRIC FIELD SENSOR
Document Type and Number:
WIPO Patent Application WO/2017/065104
Kind Code:
A1
Abstract:
[Problem] To obtain an optical modulation element which is capable of modulating laser light L incident thereon by means of a compound semiconductor single crystal that has properties of producing an electro-optic effect, and wherein attenuation of signal intensity in a low frequency band is prevented without lowering the carrier concentration in the compound semiconductor. [Solution] An optical modulation element 23 is provided with: an incidence limiting means 25 which is provided on or in the vicinity of an incident surface 24a of a compound semiconductor single crystal 24, on said incident surface 24a laser light L being able to be incident, and which prevents light other than the laser light L from being incident on the incident surface 24a; and a shielding material 26 which is formed from a material having light shielding properties and low dielectric constant, and which covers a surface 24c of the compound semiconductor single crystal 24, said surface 24c extending along the traveling direction of the laser light L incident on the compound semiconductor single crystal 24.

Inventors:
SHINAGAWA MITSURU (JP)
ASAHI TOSHIAKI (JP)
Application Number:
PCT/JP2016/079922
Publication Date:
April 20, 2017
Filing Date:
October 07, 2016
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
SHINAGAWA MITSURU (JP)
International Classes:
G01R29/08
Foreign References:
JPH0688840A1994-03-29
JPH055755A1993-01-14
JP2010230594A2010-10-14
JP2005214892A2005-08-11
Other References:
See also references of EP 3306326A4
Attorney, Agent or Firm:
OGOSHI Isamu et al. (JP)
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