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Patent Searching and Data


Title:
OPTICAL SEMICONDUCTOR INTEGRATED ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/144752
Kind Code:
A1
Abstract:
This optical semiconductor integrated element is provided with: a laser diode portion (20) provided on an upper surface of an n-type InP substrate (10); a spot size converting portion (30) which is provided on the upper surface of the n-type InP substrate (10) and comprises a tapering core layer (32) allowing emitted laser light to propagate therethrough and having both sides tapering in a laser light propagating direction, a p-type InP cladding layer (33) disposed on an upper surface side of the core layer (32), an n-type InP cladding layer (31) disposed on a lower surface side of the core layer (32), n-type InP cladding layers (34a, 34b) which are first cladding layers provided on both sides of the core layer (32), and a p-type InP cladding layer (27) which is a second cladding layer provided on the respective upper surfaces of the p-type InP cladding layer (33) and the first cladding layer; a window region (40) provided on the upper surface of the n-type InP substrate (10) on a distal end side of the core layer (32); and a monitor photodiode (PD) (50) of a monitoring portion provided on the upper surface of the window region (40). The first cladding layer has a refraction index lower than a refraction index of the second cladding layer.

Inventors:
MORITA YOSHIMICHI (JP)
Application Number:
PCT/JP2019/000277
Publication Date:
July 16, 2020
Filing Date:
January 09, 2019
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01S5/026; H01S5/16
Foreign References:
JP2000269587A2000-09-29
JP2016096310A2016-05-26
JPH04211209A1992-08-03
JPH04134896A1992-05-08
JPS63222485A1988-09-16
US20100290489A12010-11-18
Attorney, Agent or Firm:
OIWA Masuo et al. (JP)
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