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Title:
OXIDE SEMICONDUCTOR THIN FILM AND THIN FILM TRANSISTOR
Document Type and Number:
WIPO Patent Application WO/2015/008805
Kind Code:
A1
Abstract:
Provided is a crystalline oxide semiconductor thin film comprising only a bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier concentration and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In + Ga) atomic ratio, has a In2O3 phase having a bixbyite structure as the main crystal phase, and has a GaInO3 phase having a β-Ga2O3-type structure, or a GaInO3 phase having a β-Ga2O3-type structure and a (Ga,In)2O3 phase finely dispersed therein. The amorphous oxide thin film is microfabricated by peforming etching using photolithography, and is annealed.

Inventors:
NAKAYAMA TOKUYUKI (JP)
NISHIMURA EIICHIRO (JP)
IWARA MASASHI (JP)
Application Number:
PCT/JP2014/068961
Publication Date:
January 22, 2015
Filing Date:
July 16, 2014
Export Citation:
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Assignee:
SUMITOMO METAL MINING CO (JP)
International Classes:
H01L29/786; C23C14/08; C23C14/34; H01L21/336; H01L21/363; H01L21/477
Foreign References:
JP2007277039A2007-10-25
JP2013067855A2013-04-18
JP2013128128A2013-06-27
Attorney, Agent or Firm:
Kiwa International (JP)
Patent business corporation Takakazu patent firm (JP)
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