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Patent Searching and Data


Title:
OXIDE SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2017/069022
Kind Code:
A1
Abstract:
Provided is an oxide semiconductor wherein a p-type semiconductor can be realized, and the oxide semiconductor has excellent transparency, mobility, and weather resistance. By the present invention, an oxide semiconductor is realized by an oxide composite having a pyrochlore structure including Sn and Nb, the Sn/Nb compositional ratio satisfying the expression 0.81 ≤ Sn/Nb < 1.0. The oxide semiconductor has a wide gap of 2.2 eV, and is therefore a p-type semiconductor having transparency in the visible light region and high mobility. When the amount of Sn is small with respect to the stoichiometric composition of the compositional formula Sn2Nb2O7, i.e., Sn/Nb < 1, a p-type can be realized by generation of a structural defect V''Sn, and a pyrochlore structure is obtained when the compositional ratio Sn/Nb is at least 0.81.

Inventors:
KIKUCHI NAOTO (JP)
TONOOKA KAZUHIKO (JP)
AIURA YOSHIHIRO (JP)
KAWANAKA HIROFUMI (JP)
WANG RUIPING (JP)
TAKASHIMA HIROSHI (JP)
SAMIZO AKANE (JP)
IKEDA SHINTAROU (JP)
Application Number:
PCT/JP2016/080205
Publication Date:
April 27, 2017
Filing Date:
October 12, 2016
Export Citation:
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Assignee:
NAT INST ADVANCED IND SCIENCE & TECH (JP)
International Classes:
C01G33/00; C04B35/457; C04B35/495; H01L21/363; H01L21/368; H01L29/24; H01L29/786
Foreign References:
JPS58219703A1983-12-21
JP2003117407A2003-04-22
JP2004344733A2004-12-09
Other References:
KATAYAMA, SHOTA ET AL., JOURNAL OF CRYSTAL GROWTH, vol. 416, 15 April 2015 (2015-04-15), pages 126 - 129, XP029176029, ISSN: 0022-0248
CRUZ, LUISA PAULA ET AL.: "Pyrochlore-type tin niobate, Acta Crystallographica", SECTION C: CRYSTAL STRUCTURE COMMUNICATIONS, vol. C57, no. 9, 2001, pages 1001 - 1003, ISSN: 0108-2701
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