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Patent Searching and Data


Title:
PATTERN FORMING METHOD, RESIST PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/052365
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a pattern forming method having an excellent DOF; a resist pattern formed by said pattern forming method; and an electronic device production method involving said pattern forming method. This pattern forming method comprises: a step a for applying an active ray-sensitive or radiation-sensitive resin composition on a substrate and forming a resist film; a step b for forming an upper layer film on the resist film by applying an upper-layer-film-forming composition on the resist film; a step c for exposing the resist film on which the upper layer film has been formed; and a step d for developing the exposed resist film with a developing liquid including an organic solvent, and forming a pattern. The active ray-sensitive or radiation-sensitive resin composition includes a compound that has a molecular weight of 870 or less and that produces an acid by the irradiation of an active ray or radiation.

Inventors:
TANGO NAOHIRO (JP)
YAMAMOTO KEI (JP)
INOUE NAOKI (JP)
SHIRAKAWA MICHIHIRO (JP)
GOTO AKIYOSHI (JP)
Application Number:
PCT/JP2015/077227
Publication Date:
April 07, 2016
Filing Date:
September 28, 2015
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
G03F7/004; G03F7/038; G03F7/039; G03F7/11; G03F7/32; G03F7/38
Foreign References:
JP2014167614A2014-09-11
JP2014056194A2014-03-27
JP2013151592A2013-08-08
JP2013097003A2013-05-20
JP2013097002A2013-05-20
JP2013033227A2013-02-14
JP2013076974A2013-04-25
JP2008309878A2008-12-25
JP2014178566A2014-09-25
JP2015114341A2015-06-22
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
Mochitoshi Watanabe (JP)
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