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Patent Searching and Data


Title:
PATTERNING METHOD AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/205739
Kind Code:
A1
Abstract:
A patterning method and a semiconductor structure. The patterning method comprises the following steps: providing a substrate, the substrate comprising an array area (AA) and an adjacent peripheral area (PA); forming on the substrate a pattern transfer layer (100) having a plurality of first hard masks (180), the first hard masks (180) extending along a first direction (D1) and arranged at intervals; forming a barrier layer (200) on the pattern transfer layer (100); forming on the barrier layer (200) a plurality of second hard masks (400) extending along a second direction (D2), the second hard masks (400) being arranged at intervals; a second hard mask (400) is located in the array area (AA) and has a structural defect at a location close to the peripheral area (PA); forming a first buffer layer (310) on the barrier layer (200), the first buffer (310) filling a second hard mask (400) having a structural defect, and an orthographic projection of the first buffer layer (310) coinciding with the peripheral area (PA) and the array area (AA); and patterning the barrier layer (200) and the pattern transfer layer (100) using the first buffer layer (310) and a second hard mask (400) not filled by the first buffer layer (310) as a mask.

Inventors:
WAN QIANG (CN)
XIA JUN (CN)
ZHAN KANGSHU (CN)
LI SEN (CN)
LIU TAO (CN)
XU PENGHUI (CN)
Application Number:
PCT/CN2021/112608
Publication Date:
October 06, 2022
Filing Date:
August 13, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108
Foreign References:
CN113097142A2021-07-09
CN109767977A2019-05-17
CN106252507A2016-12-21
CN108597992A2018-09-28
US10395976B12019-08-27
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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