Title:
PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING ELEMENT
Document Type and Number:
WIPO Patent Application WO/2021/070586
Kind Code:
A1
Abstract:
A first photoelectric conversion element according to an embodiment of the present disclosure comprises: a light-absorbing layer that has a light incidence surface and that contains a compound semiconductor material; a first electrode that is provided for each pixel so as to face a surface opposite the light incidence surface of the light-absorbing layer; a first-conductivity-type first semiconductor layer that is provided between the light-absorbing layer and the first electrode; a second-conductivity-type second semiconductor layer that is provided between the first semiconductor layer and the light-absorbing layer; a second-conductivity-type diffusion region that is provided between adjacent pixels so as to extend over the second semiconductor layer and the light-absorbing layer; a groove that forms a separation, between the adjacent pixels, in the first semiconductor layer, the second semiconductor layer, and a portion of the light-absorbing layer; a first insulating film that is provided in a continuous manner on the side walls and bottom surface of the groove; and a light-shielding film that is provided in a continuous manner from a side wall of the first semiconductor layer to the side wall of the light-absorbing layer such that the first insulating film is between the light-shielding film and said side walls.
Inventors:
YAMANE CHIGUSA (JP)
Application Number:
PCT/JP2020/035040
Publication Date:
April 15, 2021
Filing Date:
September 16, 2020
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L31/107; H01L21/301; H01L27/146
Domestic Patent References:
| WO2018212175A1 | 2018-11-22 |
Foreign References:
| US20150256769A1 | 2015-09-10 | |||
| JP2010034166A | 2010-02-12 | |||
| JP2002246582A | 2002-08-30 |
Attorney, Agent or Firm:
TSUBASA PATENT PROFESSIONAL CORPORATION (JP)
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