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Title:
PHOTOSENSITIVE RESIN AND PHOTORESIST COMPOSITION USING SAME
Document Type and Number:
WIPO Patent Application WO/2022/056700
Kind Code:
A1
Abstract:
A photosensitive resin and a photoresist composition using same. The photosensitive resin comprises resin-type photosensitive anions and sulfonium salt cations, wherein in the structural formula of the resin-type photosensitive anion, R1 and R2 are H or methyl; R3 is a modified structure; R4, R5, and R6 are one or more of alkyl, aryl or a sulfur/oxygen/nitrogen heteroatom-containing substituent in which the number of hydrogen atoms is an integer between 1 and 40 and the number of carbon atoms is an integer between 1 and 20; n is an integer between 2 and 200, and R7 is one or more of alkyl, aryl or a sulfur/oxygen/nitrogen heteroatom-containing functional structure. The photosensitive resin is applied to the photoresist composition to improve the film forming capability of the photoresist composition, improve a photolithographic pattern, improve photoresist resolution, and reduce line width roughness, such that the photoresist composition can be applied to photolithography of large scale integrated circuits.

Inventors:
GU DAGONG (CN)
YU SHAOSHAN (CN)
QI GUOQIANG (CN)
MAO ZHIBIAO (CN)
XU CONGYING (CN)
XU DONGSHENG (CN)
FANG TAO (CN)
CHEN LING (CN)
Application Number:
PCT/CN2020/115465
Publication Date:
March 24, 2022
Filing Date:
September 16, 2020
Export Citation:
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Assignee:
NINGBO NATA OPTO ELECTRONIC MAT CO LTD (CN)
JIANGSU NATA OPTO ELECT MAT CO LTD (CN)
International Classes:
C07C321/30; C07C303/32; C07C309/04; C07C319/20; G03F7/004
Domestic Patent References:
WO2013024756A12013-02-21
Foreign References:
US20110183263A12011-07-28
JP2012073398A2012-04-12
CN102603579A2012-07-25
Attorney, Agent or Firm:
GLAMORAL INTELLECTUAL PROPERTY AGENCY. CO. (CN)
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