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Patent Searching and Data


Title:
PLASMA ETCHING APPARATUS COMPONENT FOR MANUFACTURING SEMICONDUCTOR COMPRISING COMPOSITE SINTERED BODY AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2021/015474
Kind Code:
A1
Abstract:
Provided is a plasma etching apparatus component for manufacturing a semiconductor, the component comprising a composite sintered body comprising: 30-70 vol% of yttria (Y 2O 3); and 30-70 vol% of magnesia (MgO), and having plasma resistance. The plasma etching apparatus component for manufacturing a semiconductor, provided in an aspect of the present invention, has excellent corrosion resistance to plasma, and can have good corrosion resistance to plasma even when the composite sintered body is sintered at relatively low relative density. In addition, the grain size of the composite sintered body is small, and the increase in surface roughness after etching is small, and thus there is the effect that contaminant particles can be reduced. Moreover, compared to existing plasma-resistant materials, the composite sintered body has excellent strength and is inexpensive, and thus is excellent in terms of economic efficiency and applicability.

Inventors:
PARK YOUNG JO (KR)
KIM HA NEUL (KR)
KO JAE WOONG (KR)
KIM MI JU (KR)
OH HYEON MYEONG (KR)
Application Number:
PCT/KR2020/009193
Publication Date:
January 28, 2021
Filing Date:
July 13, 2020
Export Citation:
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Assignee:
KOREA INSTITUTE OF MACHINERY AND MAT (KR)
International Classes:
H01L21/67; C04B35/04; C04B35/505; H01J37/32; H01L21/3065
Foreign References:
JPH05330903A1993-12-14
CN103539433A2014-01-29
JP2003238250A2003-08-27
KR20170127636A2017-11-22
JP2006008493A2006-01-12
Attorney, Agent or Firm:
LEE, Won Hee (KR)
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