Title:
PLASMA PROCESSING DEVICE, AND METHOD FOR CONTROLLING SOURCE FREQUENCY OF SOURCE HIGH-FREQUENCY ELECTRIC POWER
Document Type and Number:
WIPO Patent Application WO/2022/163535
Kind Code:
A1
Abstract:
The disclosed plasma processing device is provided with a chamber, a substrate supporting unit, a high-frequency power source, and a bias power source control unit. The high-frequency power source generates source high-frequency electric power in order to produce plasma in the chamber. A bias power source periodically imparts bias energy having a waveform cycle to a bias electrode of the substrate supporting unit. The high-frequency power source adjusts the source frequency of the source high-frequency electric power in an n-th phase period within an m-th waveform cycle among a plurality of waveform cycles, in accordance with a change in a degree of reflection of the source high-frequency electric power. The change in the degree of reflection is identified by using mutually different source frequencies in the n-th phase periods of each of at least two cycles before the m-th waveform cycle.
Inventors:
TAMAMUSHI GEN (JP)
KOSHIMIZU CHISHIO (JP)
INOUE MASAHIRO (JP)
MATSUYAMA SHOICHIRO (JP)
KOSHIMIZU CHISHIO (JP)
INOUE MASAHIRO (JP)
MATSUYAMA SHOICHIRO (JP)
Application Number:
PCT/JP2022/002244
Publication Date:
August 04, 2022
Filing Date:
January 21, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46
Foreign References:
| JP2019186098A | 2019-10-24 | |||
| JP2018073904A | 2018-05-10 | |||
| JP2007103102A | 2007-04-19 | |||
| JP2010219026A | 2010-09-30 | |||
| JP2020532859A | 2020-11-12 | |||
| US20020096257A1 | 2002-07-25 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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