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Patent Searching and Data


Title:
POINT SOURCE LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2021/066116
Kind Code:
A1
Abstract:
An objective of the present invention is to provide a point source light emitting diode and method for manufacturing the same such that manufacturing steps can be simplified and emissions of a light emission pattern from places other than a light emission window can be reduced. A point source light emitting diode according to the present invention comprises: a substrate; an n-type cladding layer; a light emission layer; a p-type cladding layer; an n-type current confinement layer comprising an aperture part; a p-type contact layer which is disposed upon the n-type current confinement layer; and a p-type electrode comprising a light emission window which has a common center with the aperture part. The window aperture width of the light emission window is greater than or equal to the aperture width of the aperture part. The point source light emitting diode comprises a hydrogen ion injection part which spans from the p-type contact layer toward the light emission layer in the thickness direction. The light emission layer comprises: a non-injection region having a common center with the light emission window and a region width greater than the aperture width of the light emission window; and a hydrogen ion injection region which surrounds the non-injection region.

Inventors:
IWATA Masatoshi (4-14-1, Sotokanda, Chiyoda-k, Tokyo 21, JP)
SHINDO Naruki (4-14-1, Sotokanda, Chiyoda-k, Tokyo 21, JP)
Application Number:
JP2020/037477
Publication Date:
April 08, 2021
Filing Date:
October 01, 2020
Export Citation:
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Assignee:
DOWA ELECTRONICS MATERIALS CO., LTD. (Sotokanda Chiyoda-k, Tokyo 21, JP)
International Classes:
H01L33/14
Attorney, Agent or Firm:
SUGIMURA Kenji (3-2-1 Kasumigaseki, Chiyoda-k, Tokyo 13, JP)
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