POLISHING COMPOSITION AND SILICON-SUBSTRATE POLISHING METHOD

WIPO Patent Application WO/2019/049610

A1

Provided is a polishing composition with which it is possible to simultaneously realize low LPD and low surface roughness. The polishing composition provided by the present invention includes abrasive grains, a water-soluble polymer, a surfactant, and a basic compound. With the water-soluble polymer, a washing parameter α represented by expression α = θ1 −θ0 satisfies 1 <α < 35. Here, θ0 in the aforementioned expression is the water contact angle of a pre-SC-1-treatment wafer obtained by applying an aqueous solution of the water-soluble polymer to a surface of a monocrystalline silicon wafer and by subsequently washing the surface with water, and θ1 in the aforementioned expression is the water contact angle of a post-SC-1-treatment wafer obtained by subjecting the pre-SC-1-treatment wafer to a washing treatment A in which the pre-SC-1-treatment wafer is treated for 10 seconds with a room-temperature SC-1 washing liquid LA containing 29% aqueous ammonia, 31% hydrogen peroxide solution, and water at a volume ratio of 1:2:30.

JP4122004	Plasma etching chamber and plasma etching system using this
JP2006228823	COMPOSITION FOR POLISHING METAL FILM
JP2008207116	CLEANING APPARATUS

TSUCHIYA KOHSUKE (JP)
ASADA MAKI (JP)

PCT/JP2018/030185

March 14, 2019

August 13, 2018

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FUJIMI INC (JP)

H01L21/304; B24B37/00; C09K3/14; H01L21/308

WO2016181889A1

2016-11-17

JP2013021291A	2013-01-31
JP2004095870A	2004-03-25
JPH05275410A	1993-10-22

ABE, Makoto (JP)

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