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Title:
POLISHING COMPOSITION USING POLISHING PARTICLES CONTAINING BASIC SUBSTANCE AND HAVING HIGH WATER AFFINITY
Document Type and Number:
WIPO Patent Application WO/2020/262628
Kind Code:
A1
Abstract:
[Problem] To provide a polishing composition that is for use in CMP polishing and that makes it possible to minimize the occurrence of defects. [Solution] A polishing composition containing silica particles, a nitrogen-containing organic compound that is basic, and water as a solvent, in which the Rsp value represented by formula (1) as calculated from a pulse NMR measurement value is greater than 0.7 and equal to or less than 6. Formula (1): Rsp = (Rav - Rb)/(Rb) (in formula (1), Rsp is an index indicating water affinity, Rav is the reciprocal of the relaxation time of the polishing composition, and Rb is the reciprocal of the relaxation time of the water serving as a solvent in the polishing composition).

Inventors:
MITSUI SHIGERU (JP)
ISHIMIZU EIICHIRO (JP)
NISHIMURA TOHRU (JP)
OMORI WATARU (JP)
Application Number:
PCT/JP2020/025284
Publication Date:
December 30, 2020
Filing Date:
June 26, 2020
Export Citation:
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Assignee:
NISSAN CHEMICAL CORP (JP)
International Classes:
C09K3/14; B24B37/00; H01L21/304
Domestic Patent References:
WO2018012174A12018-01-18
WO2018116890A12018-06-28
Foreign References:
JP2016540840A2016-12-28
JP2010161201A2010-07-22
Attorney, Agent or Firm:
HANABUSA PATENT & TRADEMARK OFFICE (JP)
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