Title:
POLISHING LIQUID AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/181437
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a polishing liquid which, when applied to CMP, has a high selectivity of polishing silicon nitride over silicon oxide and which does not tend to cause defects in the polished surface; and to provide a chemical mechanical polishing method.
This polishing liquid is used in chemical mechanical polishing and contains colloidal silica. The zeta potential of the colloidal silica measured in a state in the polishing liquid is less than or equal to -20 mV, the electrical conductivity is less than or equal to 200 μS/cm, the pH is 2 to 6, and the transmittance is 70-99%.
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2019/008080
Publication Date:
September 26, 2019
Filing Date:
March 01, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2008117592A1 | 2008-10-02 | |||
| WO2011093153A1 | 2011-08-04 | |||
| WO2017169808A1 | 2017-10-05 |
Foreign References:
| JP2015201644A | 2015-11-12 | |||
| JP2017149798A | 2017-08-31 | |||
| JP2016069465A | 2016-05-09 | |||
| JP2012033647A | 2012-02-16 | |||
| JP2015174953A | 2015-10-05 | |||
| JP2012040671A | 2012-03-01 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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