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Title:
POLISHING SOLUTION, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/032929
Kind Code:
A1
Abstract:
This polishing solution is for polishing a resin-containing polishing target member and contains an ether compound having a hydroxy group, and abrasive grains containing cerium oxide. This polishing method is for polishing a resin-containing polishing target member by using the polishing solution. This component manufacturing method is for obtaining a component by using the polishing target member polished by the polishing method. This semiconductor component manufacturing method is for obtaining a semiconductor component by using the polishing target member polished by the polishing method.

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Inventors:
ARATA SHOGO (JP)
SAKASHITA MASAHIRO (JP)
ICHIGE YASUHIRO (JP)
HOSHI YOUSUKE (JP)
Application Number:
PCT/JP2022/032452
Publication Date:
March 09, 2023
Filing Date:
August 29, 2022
Export Citation:
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Assignee:
RESONAC CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
WO2019142292A12019-07-25
WO2019182061A12019-09-26
WO2018147074A12018-08-16
WO2016006631A12016-01-14
Foreign References:
CN111315836A2020-06-19
CN106701020A2017-05-24
US4161394A1979-07-17
JP2007318072A2007-12-06
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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