Title:
POLISHING SOLUTION, POLISHING METHOD, METHOD FOR PRODUCING SEMICONDUCTOR COMPONENT, AND METHOD FOR PRODUCING JOINED BODY
Document Type and Number:
WIPO Patent Application WO/2023/032028
Kind Code:
A1
Abstract:
The present invention provides a polishing solution that contains an ammonium salt and abrasive grains containing cerium oxide, and that has a pH of 9.00 or greater. The present invention provides a polishing method for polishing, using this polishing solution, a member to be polished that contains copper. The present invention provides a method for producing a semiconductor component, in which a semiconductor component is obtained by dicing a member to be polished that has been polished by the polishing method. The present invention provides a method for producing a joined body, in which a joining surface of a body to be joined is joined with a joining surface of a member to be polished that has been polished by the polishing method, or a joining surface of a semiconductor component obtained by the method for producing a semiconductor component.
Inventors:
ARATA SHOGO (JP)
ICHIGE YASUHIRO (JP)
ICHIGE YASUHIRO (JP)
Application Number:
PCT/JP2021/031894
Publication Date:
March 09, 2023
Filing Date:
August 31, 2021
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
C09K3/14; H01L21/304
Domestic Patent References:
| WO2011122415A1 | 2011-10-06 | |||
| WO2012165016A1 | 2012-12-06 | |||
| WO2005110679A1 | 2005-11-24 |
Foreign References:
| JPH1094955A | 1998-04-14 | |||
| US20160068711A1 | 2016-03-10 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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