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Title:
POLYCRYSTAL SILICON ROD, POLYCRYSTAL SILICON ROD PRODUCTION METHOD, AND POLYCRYSTAL SILICON THERMAL PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/113460
Kind Code:
A1
Abstract:
The objective of the present invention is to increase the overall purity of a polycrystal silicon rod. This polycrystal silicon rod (1) is such that the outer total concentration (C1) is 100 pptw or lower, and the ratio of the outer total concentration (C1) to the inner total concentration (C2) is between 1.0 and 2.5 inclusive.

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Inventors:
SAKAI JUNYA (JP)
HAKOMORI AKIRA (JP)
Application Number:
PCT/JP2021/032101
Publication Date:
June 02, 2022
Filing Date:
September 01, 2021
Export Citation:
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Assignee:
TOKUYAMA CORP (JP)
International Classes:
C01B33/035
Foreign References:
JP2016521239A2016-07-21
JP2020045257A2020-03-26
JP2010180078A2010-08-19
JP2015214428A2015-12-03
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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